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Main Authors: van der Veer, Ewout, Sarott, Martin F., Eckstein, Jack T., Feringa, Stijn, van der Veen, Dennis, González, Johanna van Gent, Ahmadi, Majid, Cox, Horatio R. J., Kiens, Ellen M., Koster, Gertjan, Kooi, Bart J., Carpenter, Michael A., Salje, Ekhard K. H., Noheda, Beatriz
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2505.11021
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author van der Veer, Ewout
Sarott, Martin F.
Eckstein, Jack T.
Feringa, Stijn
van der Veen, Dennis
González, Johanna van Gent
Ahmadi, Majid
Cox, Horatio R. J.
Kiens, Ellen M.
Koster, Gertjan
Kooi, Bart J.
Carpenter, Michael A.
Salje, Ekhard K. H.
Noheda, Beatriz
author_facet van der Veer, Ewout
Sarott, Martin F.
Eckstein, Jack T.
Feringa, Stijn
van der Veen, Dennis
González, Johanna van Gent
Ahmadi, Majid
Cox, Horatio R. J.
Kiens, Ellen M.
Koster, Gertjan
Kooi, Bart J.
Carpenter, Michael A.
Salje, Ekhard K. H.
Noheda, Beatriz
contents Bestowing CMOS-compatible binary oxides with additional functionalities is a powerful strategy toward the realization of oxide electronics. Ideal candidates are thin films which display a strong sensitivity to strain, chemical doping or nanoscale confinement. Among these, crystalline tungsten trioxide WO3 exhibits exceptional structural flexibility, enabling a wide range of functionalities. Here, we reveal the emergence of a previously unreported polar phase in epitaxial WO3 thin films. We accomplish this by imposing epitaxial shear strain, which stabilizes a low-symmetry triclinic structure that persists up to large film thicknesses and elevated temperatures. At the atomic scale, a change in the oxygen octahedral tilt pattern facilitates this symmetry lowering into a polar phase, which manifests as a periodic in-plane polarized stripe domain configuration with needle-like bifurcations at the microscale. The stripe domain walls further exhibit a strongly enhanced electrical conductivity in conjunction with a pronounced reduction of a distortive structural mode, providing the first experimental evidence for the formation of anti-distortive polarons recently predicted in WO3.
format Preprint
id arxiv_https___arxiv_org_abs_2505_11021
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Polarity and anti-distortive polarons in WO3 through epitaxial shear strain
van der Veer, Ewout
Sarott, Martin F.
Eckstein, Jack T.
Feringa, Stijn
van der Veen, Dennis
González, Johanna van Gent
Ahmadi, Majid
Cox, Horatio R. J.
Kiens, Ellen M.
Koster, Gertjan
Kooi, Bart J.
Carpenter, Michael A.
Salje, Ekhard K. H.
Noheda, Beatriz
Materials Science
Bestowing CMOS-compatible binary oxides with additional functionalities is a powerful strategy toward the realization of oxide electronics. Ideal candidates are thin films which display a strong sensitivity to strain, chemical doping or nanoscale confinement. Among these, crystalline tungsten trioxide WO3 exhibits exceptional structural flexibility, enabling a wide range of functionalities. Here, we reveal the emergence of a previously unreported polar phase in epitaxial WO3 thin films. We accomplish this by imposing epitaxial shear strain, which stabilizes a low-symmetry triclinic structure that persists up to large film thicknesses and elevated temperatures. At the atomic scale, a change in the oxygen octahedral tilt pattern facilitates this symmetry lowering into a polar phase, which manifests as a periodic in-plane polarized stripe domain configuration with needle-like bifurcations at the microscale. The stripe domain walls further exhibit a strongly enhanced electrical conductivity in conjunction with a pronounced reduction of a distortive structural mode, providing the first experimental evidence for the formation of anti-distortive polarons recently predicted in WO3.
title Polarity and anti-distortive polarons in WO3 through epitaxial shear strain
topic Materials Science
url https://arxiv.org/abs/2505.11021