Scalable thru-hole epitaxy of GaN through self-adjusting $h$-BN masks via solution-processed 2D stacks

Fuente: arXiv

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Bibliographic Details
Main Authors:	Ha, Jongwoo, Choi, Minah, Yang, Jieun, Kim, Chinkyo
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2505.11045