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Scalable thru-hole epitaxy of GaN through self-adjusting $h$-BN masks via solution-processed 2D stacks

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Ha, Jongwoo, Choi, Minah, Yang, Jieun, Kim, Chinkyo
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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