Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866916742233587712 |
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| author | Zhi, Zhenghang Ruan, Hanzhi Liu, Jiuming Li, Xinpeng Zhang, Yong Yao, Qi Tang, Chenjia Xiao, Yujie Kou, Xufeng |
| author_facet | Zhi, Zhenghang Ruan, Hanzhi Liu, Jiuming Li, Xinpeng Zhang, Yong Yao, Qi Tang, Chenjia Xiao, Yujie Kou, Xufeng |
| contents | We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately optimizing the Al-to-Ga ratio in the AlGaSb barrier layer, the quantum confinement of the heterostructure is significantlyenhanced, which results in both an ultra-high electron mobility of 924000 cm2/Vs and a giant magnetoresistance ratio of 365000 at low temperatures. Meanwhile, pronounced Shubnikov-deHaas quantum oscillations persist up to 30 K, and their single-frequency feature indicates a well defined Fermi surface without subband mixing in the two-dimensional electron gas channel. Moreover, the large effective g-factor of 12.93 leads to the observation of Zeeman splitting at large magnetic fields. Our results validate the AlGaSb/InAs quantum well heterostructures as a suitable candidate for constructing energy-efficient topological spintronic devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2505_12219 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures Zhi, Zhenghang Ruan, Hanzhi Liu, Jiuming Li, Xinpeng Zhang, Yong Yao, Qi Tang, Chenjia Xiao, Yujie Kou, Xufeng Mesoscale and Nanoscale Physics Materials Science We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately optimizing the Al-to-Ga ratio in the AlGaSb barrier layer, the quantum confinement of the heterostructure is significantlyenhanced, which results in both an ultra-high electron mobility of 924000 cm2/Vs and a giant magnetoresistance ratio of 365000 at low temperatures. Meanwhile, pronounced Shubnikov-deHaas quantum oscillations persist up to 30 K, and their single-frequency feature indicates a well defined Fermi surface without subband mixing in the two-dimensional electron gas channel. Moreover, the large effective g-factor of 12.93 leads to the observation of Zeeman splitting at large magnetic fields. Our results validate the AlGaSb/InAs quantum well heterostructures as a suitable candidate for constructing energy-efficient topological spintronic devices. |
| title | Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2505.12219 |