Saved in:
Bibliographic Details
Main Authors: Siegl, Manuel, Zanon, Julian, Sink, Joseph, da Cruz, Adonai Rodrigues, Hedgeland, Holly, Curson, Neil J., Flatté, Michael E., Schofield, Steven R.
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2505.13041
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866916744099004416
author Siegl, Manuel
Zanon, Julian
Sink, Joseph
da Cruz, Adonai Rodrigues
Hedgeland, Holly
Curson, Neil J.
Flatté, Michael E.
Schofield, Steven R.
author_facet Siegl, Manuel
Zanon, Julian
Sink, Joseph
da Cruz, Adonai Rodrigues
Hedgeland, Holly
Curson, Neil J.
Flatté, Michael E.
Schofield, Steven R.
contents We present the first scanning tunneling microscopy (STM) images of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tight-binding calculations provide an excellent description of the observed square ring-like features, confirming their acceptor character and attributing their symmetry to the light- and heavy-hole band degeneracy in silicon. Detailed understanding of the energetic and spatial properties of acceptor wave functions in silicon is essential for engineering large-scale acceptor-based quantum devices.
format Preprint
id arxiv_https___arxiv_org_abs_2505_13041
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Imaging the Acceptor Wave Function Anisotropy in Silicon
Siegl, Manuel
Zanon, Julian
Sink, Joseph
da Cruz, Adonai Rodrigues
Hedgeland, Holly
Curson, Neil J.
Flatté, Michael E.
Schofield, Steven R.
Mesoscale and Nanoscale Physics
We present the first scanning tunneling microscopy (STM) images of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tight-binding calculations provide an excellent description of the observed square ring-like features, confirming their acceptor character and attributing their symmetry to the light- and heavy-hole band degeneracy in silicon. Detailed understanding of the energetic and spatial properties of acceptor wave functions in silicon is essential for engineering large-scale acceptor-based quantum devices.
title Imaging the Acceptor Wave Function Anisotropy in Silicon
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.13041