Significant Enhancement of Carrier Mobility in Finite vs. Infinite Square Quantum Wells: A Comparative Study of GaAs/In$_x$Ga$_{1-x}$As/GaAs Heterostructures
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arXiv
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| Format: | Preprint |
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2025
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| author | Van Tuan, Truong Chinh, Nguyen Dung Tai, Tran Trong Van Tai, Vo Vy, Nguyen Duy |
| author_facet | Van Tuan, Truong Chinh, Nguyen Dung Tai, Tran Trong Van Tai, Vo Vy, Nguyen Duy |
| contents | The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures using a variational-subband-wave-function model, analyzing key scattering mechanisms: remote impurities (RI), alloy disorder (AD), surface roughness (SR), acoustic (ac) and piezoelectric (PE) phonons, and longitudinal optical (LO) phonons. The mobility ratio $R=μ_{fin}/μ_{inf}$ reveals distinct trends: $R_{RI}$ and $R_{LO}<$ 1 (long-range Coulomb/inelastic scattering), while $R_{AD}$, $R_{ac}$, $R_{PE}$, $R_{SR}>$ 1 (static potentials). Finite QWs achieve higher mobility at low temperatures (77 K), narrow widths ($<$ 100 Å), and low densities, enhanced by high indium content. Conversely, infinite QWs outperform at 300 K due to dominant LO scattering. These findings provide actionable guidelines for optimizing QW-based devices such as HEMTs and lasers across operational regimes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_13920 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Significant Enhancement of Carrier Mobility in Finite vs. Infinite Square Quantum Wells: A Comparative Study of GaAs/In$_x$Ga$_{1-x}$As/GaAs Heterostructures Van Tuan, Truong Chinh, Nguyen Dung Tai, Tran Trong Van Tai, Vo Vy, Nguyen Duy Mesoscale and Nanoscale Physics The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures using a variational-subband-wave-function model, analyzing key scattering mechanisms: remote impurities (RI), alloy disorder (AD), surface roughness (SR), acoustic (ac) and piezoelectric (PE) phonons, and longitudinal optical (LO) phonons. The mobility ratio $R=μ_{fin}/μ_{inf}$ reveals distinct trends: $R_{RI}$ and $R_{LO}<$ 1 (long-range Coulomb/inelastic scattering), while $R_{AD}$, $R_{ac}$, $R_{PE}$, $R_{SR}>$ 1 (static potentials). Finite QWs achieve higher mobility at low temperatures (77 K), narrow widths ($<$ 100 Å), and low densities, enhanced by high indium content. Conversely, infinite QWs outperform at 300 K due to dominant LO scattering. These findings provide actionable guidelines for optimizing QW-based devices such as HEMTs and lasers across operational regimes. |
| title | Significant Enhancement of Carrier Mobility in Finite vs. Infinite Square Quantum Wells: A Comparative Study of GaAs/In$_x$Ga$_{1-x}$As/GaAs Heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2505.13920 |