Manipulating the hydrogen-induced insulator-metal transition through artificial microstructure engineering
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866908605159047168 |
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| author | Zhou, Xuanchi Yao, Xiaohui Lu, Wentian Guo, Jinjian Ji, Jiahui Lang, Lili Zhou, Guowei Yao, Chunwei Qiao, Xiaomei Ji, Huihui Yuan, Zhe Xu, Xiaohong |
| author_facet | Zhou, Xuanchi Yao, Xiaohui Lu, Wentian Guo, Jinjian Ji, Jiahui Lang, Lili Zhou, Guowei Yao, Chunwei Qiao, Xiaomei Ji, Huihui Yuan, Zhe Xu, Xiaohong |
| contents | Hydrogen-associated filling-controlled Mottronics within electron-correlated system provides a groundbreaking paradigm to explore exotic physical functionality and phenomena. Dynamically controlling hydrogen-induced phase transitions through external fields offers a promising route for designing protonic devices in multidisciplinary fields, but faces high-speed bottlenecks owing to slow bulk diffusion of hydrogens. Here, we present a promising pathway to kinetically expedite hydrogen-related Mott transition in correlated VO2 system by taking advantage of artificial microstructure design. Typically, inclined domain boundary configuration and cR-faceted preferential orientation simultaneously realized in VO2/Al2O3 (102) heterostructure significantly lower the diffusion barrier via creating an unobstructed conduit for hydrogen diffusion. As a result, the achievable switching speed through hydrogenation outperforms that of counterpart grown on widely-reported c-plane Al2O3 substrate by 2-3 times, with resistive switching concurrently improved by an order of magnitude. Of particular interest, an anomalous uphill hydrogen diffusion observed for VO2 with a highway for hydrogen diffusion fundamentally deviates from basic Fick's law, unveiling a deterministic role of hydrogen spatial distribution in tailoring electronic state evolution. The present work not only provides a versatile strategy for manipulating ionic evolution, endowing with great potential in designing high-speed protonic devices, but also deepens the understanding of hydrogen-induced Mott transitions in electron-correlated system. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_15181 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Manipulating the hydrogen-induced insulator-metal transition through artificial microstructure engineering Zhou, Xuanchi Yao, Xiaohui Lu, Wentian Guo, Jinjian Ji, Jiahui Lang, Lili Zhou, Guowei Yao, Chunwei Qiao, Xiaomei Ji, Huihui Yuan, Zhe Xu, Xiaohong Strongly Correlated Electrons Hydrogen-associated filling-controlled Mottronics within electron-correlated system provides a groundbreaking paradigm to explore exotic physical functionality and phenomena. Dynamically controlling hydrogen-induced phase transitions through external fields offers a promising route for designing protonic devices in multidisciplinary fields, but faces high-speed bottlenecks owing to slow bulk diffusion of hydrogens. Here, we present a promising pathway to kinetically expedite hydrogen-related Mott transition in correlated VO2 system by taking advantage of artificial microstructure design. Typically, inclined domain boundary configuration and cR-faceted preferential orientation simultaneously realized in VO2/Al2O3 (102) heterostructure significantly lower the diffusion barrier via creating an unobstructed conduit for hydrogen diffusion. As a result, the achievable switching speed through hydrogenation outperforms that of counterpart grown on widely-reported c-plane Al2O3 substrate by 2-3 times, with resistive switching concurrently improved by an order of magnitude. Of particular interest, an anomalous uphill hydrogen diffusion observed for VO2 with a highway for hydrogen diffusion fundamentally deviates from basic Fick's law, unveiling a deterministic role of hydrogen spatial distribution in tailoring electronic state evolution. The present work not only provides a versatile strategy for manipulating ionic evolution, endowing with great potential in designing high-speed protonic devices, but also deepens the understanding of hydrogen-induced Mott transitions in electron-correlated system. |
| title | Manipulating the hydrogen-induced insulator-metal transition through artificial microstructure engineering |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2505.15181 |