Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics

Fuente: arXiv
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Bibliographic Details
Main Authors: Holmes-Hewett, W. F., Miller, J. D., Ahmad, H. G., Granville, S., Ruck, B. J.
Format: Preprint
Published: 2025
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author Holmes-Hewett, W. F.
Miller, J. D.
Ahmad, H. G.
Granville, S.
Ruck, B. J.
author_facet Holmes-Hewett, W. F.
Miller, J. D.
Ahmad, H. G.
Granville, S.
Ruck, B. J.
contents Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2505_15238
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics
Holmes-Hewett, W. F.
Miller, J. D.
Ahmad, H. G.
Granville, S.
Ruck, B. J.
Materials Science
Other Condensed Matter
Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.
title Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics
topic Materials Science
Other Condensed Matter
url https://arxiv.org/abs/2505.15238