Chemical design of monolayer altermagnets

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Xu, Runzhang, Gao, Yifan, Liu, Junwei
Formato: Preprint
Publicado: 2025
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866914167786569728
author Xu, Runzhang
Gao, Yifan
Liu, Junwei
author_facet Xu, Runzhang
Gao, Yifan
Liu, Junwei
contents The crystal-symmetry-paired spin-momentum locking (CSML) arisen from the intrinsic crystal symmetry connecting different magnetic sublattices in altermagnets enables many exotic spintronics properties such as unconventional piezomagnetism and noncollinear spin current. However, the shortage of monolayer altermagnets restricts further exploration of dimensionally confined phenomena and applications of nanostructured devices. Here, we propose general chemical design principles inspired by sublattice symmetry of layered altermagnet V$_2$(Se,Te)$_2$O through symmetry-preserving structural modification and valence-adaptive chemical substitutions. In total, we construct 2600 candidates across four structural frameworks, M$_2$A$_2$B$_{1,0}$ and their Janus derivatives. High-throughput calculations identify 670 potential altermagnets with Néel-ordered ground states, among which 91 ones exhibiting CSML Dirac cones that enable spin-polarized ultra-fast transport. These materials also feature different ground-state magnetic orderings and demonstrate diverse electronic behaviors, ranging from semiconductors, metals, half-metals, to Dirac semimetals. This work not only reveals abundant monolayer altermagnets, but also establishes a rational principle for their design, opening gates for exploration of confined magnetism and spintronics in atomically thin systems.
format Preprint
id arxiv_https___arxiv_org_abs_2505_15484
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Chemical design of monolayer altermagnets
Xu, Runzhang
Gao, Yifan
Liu, Junwei
Materials Science
Mesoscale and Nanoscale Physics
The crystal-symmetry-paired spin-momentum locking (CSML) arisen from the intrinsic crystal symmetry connecting different magnetic sublattices in altermagnets enables many exotic spintronics properties such as unconventional piezomagnetism and noncollinear spin current. However, the shortage of monolayer altermagnets restricts further exploration of dimensionally confined phenomena and applications of nanostructured devices. Here, we propose general chemical design principles inspired by sublattice symmetry of layered altermagnet V$_2$(Se,Te)$_2$O through symmetry-preserving structural modification and valence-adaptive chemical substitutions. In total, we construct 2600 candidates across four structural frameworks, M$_2$A$_2$B$_{1,0}$ and their Janus derivatives. High-throughput calculations identify 670 potential altermagnets with Néel-ordered ground states, among which 91 ones exhibiting CSML Dirac cones that enable spin-polarized ultra-fast transport. These materials also feature different ground-state magnetic orderings and demonstrate diverse electronic behaviors, ranging from semiconductors, metals, half-metals, to Dirac semimetals. This work not only reveals abundant monolayer altermagnets, but also establishes a rational principle for their design, opening gates for exploration of confined magnetism and spintronics in atomically thin systems.
title Chemical design of monolayer altermagnets
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.15484