Unconventional tunnel magnetoresistance scaling with altermagnets

Fuente: arXiv
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Main Authors: Yang, Zongmeng, Yang, Xingyue, Wang, Jianhua, Li, Qiang, Peng, Rui, Lee, Ching Hua, Ang, Lay Kee, Lu, Jing, Ang, Yee Sin, Fang, Shibo
Format: Preprint
Published: 2025
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author Yang, Zongmeng
Yang, Xingyue
Wang, Jianhua
Li, Qiang
Peng, Rui
Lee, Ching Hua
Ang, Lay Kee
Lu, Jing
Ang, Yee Sin
Fang, Shibo
author_facet Yang, Zongmeng
Yang, Xingyue
Wang, Jianhua
Li, Qiang
Peng, Rui
Lee, Ching Hua
Ang, Lay Kee
Lu, Jing
Ang, Yee Sin
Fang, Shibo
contents In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier thickness. The anomalous scaling originates from the overlapping spin-split branches forming a transmission path that cannot be suppressed in the antiparallel state. Such phenomenon is explained by a double-barrier model and is further demonstrated using ab initio quantum transport simulations in 2D V2Te2O/Cr2Se2O/V2Te2O and V2Te2O/ZnSe/V2Te2O AMTJs. Our work identifies a peculiar unexpected transport characteristic of AMTJ, providing a fundamental limit on AMTJ device design and illustrating the potential optimal design of AMTJ at the ultrascaled monolayer limit.
format Preprint
id arxiv_https___arxiv_org_abs_2505_17192
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Unconventional tunnel magnetoresistance scaling with altermagnets
Yang, Zongmeng
Yang, Xingyue
Wang, Jianhua
Li, Qiang
Peng, Rui
Lee, Ching Hua
Ang, Lay Kee
Lu, Jing
Ang, Yee Sin
Fang, Shibo
Mesoscale and Nanoscale Physics
Materials Science
Computational Physics
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier thickness. The anomalous scaling originates from the overlapping spin-split branches forming a transmission path that cannot be suppressed in the antiparallel state. Such phenomenon is explained by a double-barrier model and is further demonstrated using ab initio quantum transport simulations in 2D V2Te2O/Cr2Se2O/V2Te2O and V2Te2O/ZnSe/V2Te2O AMTJs. Our work identifies a peculiar unexpected transport characteristic of AMTJ, providing a fundamental limit on AMTJ device design and illustrating the potential optimal design of AMTJ at the ultrascaled monolayer limit.
title Unconventional tunnel magnetoresistance scaling with altermagnets
topic Mesoscale and Nanoscale Physics
Materials Science
Computational Physics
url https://arxiv.org/abs/2505.17192