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Main Authors: Zhou, Nansen, Huang, Ting, Li, Helios Y., You, Jiawen, Zhang, Jinsong, Nie, Yujie, Zhang, Qihang, Huang, Chaoran, Gao, Zhaoli, Zhu, Jinlong, Zhan, Qiwen, Xu, Jianbin, Fang, Nicholas X., Zhou, Renjie
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2505.20252
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author Zhou, Nansen
Huang, Ting
Li, Helios Y.
You, Jiawen
Zhang, Jinsong
Nie, Yujie
Zhang, Qihang
Huang, Chaoran
Gao, Zhaoli
Zhu, Jinlong
Zhan, Qiwen
Xu, Jianbin
Fang, Nicholas X.
Zhou, Renjie
author_facet Zhou, Nansen
Huang, Ting
Li, Helios Y.
You, Jiawen
Zhang, Jinsong
Nie, Yujie
Zhang, Qihang
Huang, Chaoran
Gao, Zhaoli
Zhu, Jinlong
Zhan, Qiwen
Xu, Jianbin
Fang, Nicholas X.
Zhou, Renjie
contents Quantum devices exploiting twistronics by stacking two-dimensional materials could enable breakthroughs in computing and sensing beyond the limits of current transistors. Scaling up these devices poses grand challenges for in situ metrology, because existing tools lack the accuracy for characterizing sub-atomic structures. Here we demonstrate a laser-based interferometric method, termed Phase Amplification microscopy (Φ-Amp), which can push the measurement accuracy limit to the femtometer-level and beyond in ambient conditions. We show Φ-Amp amplifies weak phase signals from graphene by over 100 times through devising a phase cavity based on a novel phase-gain theory, enabling real-time, wide-field mapping of atomic layers with picometer-level accuracy. We quantified interlayer spacing differences between AB-stacked and 30-degree-twisted bilayer graphene to be ~ 0.71 Å, a subtle distortion driven by quantum interactions that was previously inaccessible to in situ metrology. We envision Φ-Amp as a transformative tool for both expediting wafer-scale atomic fabrication and advancing research in quantum materials by probing subatomic phenomena.
format Preprint
id arxiv_https___arxiv_org_abs_2505_20252
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Phase amplification microscopy towards femtometer accuracy
Zhou, Nansen
Huang, Ting
Li, Helios Y.
You, Jiawen
Zhang, Jinsong
Nie, Yujie
Zhang, Qihang
Huang, Chaoran
Gao, Zhaoli
Zhu, Jinlong
Zhan, Qiwen
Xu, Jianbin
Fang, Nicholas X.
Zhou, Renjie
Optics
Quantum devices exploiting twistronics by stacking two-dimensional materials could enable breakthroughs in computing and sensing beyond the limits of current transistors. Scaling up these devices poses grand challenges for in situ metrology, because existing tools lack the accuracy for characterizing sub-atomic structures. Here we demonstrate a laser-based interferometric method, termed Phase Amplification microscopy (Φ-Amp), which can push the measurement accuracy limit to the femtometer-level and beyond in ambient conditions. We show Φ-Amp amplifies weak phase signals from graphene by over 100 times through devising a phase cavity based on a novel phase-gain theory, enabling real-time, wide-field mapping of atomic layers with picometer-level accuracy. We quantified interlayer spacing differences between AB-stacked and 30-degree-twisted bilayer graphene to be ~ 0.71 Å, a subtle distortion driven by quantum interactions that was previously inaccessible to in situ metrology. We envision Φ-Amp as a transformative tool for both expediting wafer-scale atomic fabrication and advancing research in quantum materials by probing subatomic phenomena.
title Phase amplification microscopy towards femtometer accuracy
topic Optics
url https://arxiv.org/abs/2505.20252