Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915308886818816 |
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| author | Tajima, Yusuke Inamura, Kenshin Masaki, Sebun Yamazaki, Takumi Seki, Takeshi Kudo, Kazutaka Matsuno, Jobu Shiogai, Junichi |
| author_facet | Tajima, Yusuke Inamura, Kenshin Masaki, Sebun Yamazaki, Takumi Seki, Takeshi Kudo, Kazutaka Matsuno, Jobu Shiogai, Junichi |
| contents | We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show absorption edge at around 0.84 eV and magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surface or heterointerfaces. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2505_21867 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition Tajima, Yusuke Inamura, Kenshin Masaki, Sebun Yamazaki, Takumi Seki, Takeshi Kudo, Kazutaka Matsuno, Jobu Shiogai, Junichi Materials Science Strongly Correlated Electrons We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show absorption edge at around 0.84 eV and magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surface or heterointerfaces. |
| title | Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2505.21867 |