Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition

Fuente: arXiv
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Main Authors: Tajima, Yusuke, Inamura, Kenshin, Masaki, Sebun, Yamazaki, Takumi, Seki, Takeshi, Kudo, Kazutaka, Matsuno, Jobu, Shiogai, Junichi
Format: Preprint
Published: 2025
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author Tajima, Yusuke
Inamura, Kenshin
Masaki, Sebun
Yamazaki, Takumi
Seki, Takeshi
Kudo, Kazutaka
Matsuno, Jobu
Shiogai, Junichi
author_facet Tajima, Yusuke
Inamura, Kenshin
Masaki, Sebun
Yamazaki, Takumi
Seki, Takeshi
Kudo, Kazutaka
Matsuno, Jobu
Shiogai, Junichi
contents We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show absorption edge at around 0.84 eV and magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surface or heterointerfaces.
format Preprint
id arxiv_https___arxiv_org_abs_2505_21867
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition
Tajima, Yusuke
Inamura, Kenshin
Masaki, Sebun
Yamazaki, Takumi
Seki, Takeshi
Kudo, Kazutaka
Matsuno, Jobu
Shiogai, Junichi
Materials Science
Strongly Correlated Electrons
We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show absorption edge at around 0.84 eV and magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surface or heterointerfaces.
title Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition
topic Materials Science
Strongly Correlated Electrons
url https://arxiv.org/abs/2505.21867