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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2505.22800 |
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| _version_ | 1866914454441033728 |
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| author | Bajgain, Abhishek Jana, Santu Prasad Samokhvalov, Alexander Parker, Thomas Demaree, John Derek Budhani, Ramesh C. |
| author_facet | Bajgain, Abhishek Jana, Santu Prasad Samokhvalov, Alexander Parker, Thomas Demaree, John Derek Budhani, Ramesh C. |
| contents | Scalable and controlled doping of two-dimensional transition metal dichalcogenides is essential for tuning their electronic and optoelectronic properties. In this work, we demonstrate a robust approach for substitution of vanadium in tungsten diselenide (WSe$_2$) via the selenization of pre-deposited V$_2$O$_5$/WO$_3$ thin films. By adjusting the thickness of the vanadium oxide layer, the V concentration in W$_{1-x}$V$_x$Se$_2$ is systematically varied. Electrical measurements on field-effect transistors reveal a substantial enhancement in hole conduction, with drain current increasing by nearly three orders of magnitude compared to undoped WSe$_2$. Temperature-dependent electrical resistivity indicates a clear insulator-to-metal transition with increasing V content, likely due to band structure modifications. Concurrently, the photoconductive gain decreases, suggesting enhanced recombination and charge screening effects. These results establish vanadium doping via selenization of V$_2$O$_5$/WO$_3$ films as a scalable strategy for modulating the transport and photoresponse of WSe$_2$, offering promising implications for wafer-scale optoelectronic device integration. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_22800 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Selenization of V$_2$O$_5$/WO$_3$ Bilayers for Tuned Optoelectronic Response of WSe$_2$ Films Bajgain, Abhishek Jana, Santu Prasad Samokhvalov, Alexander Parker, Thomas Demaree, John Derek Budhani, Ramesh C. Mesoscale and Nanoscale Physics Materials Science Scalable and controlled doping of two-dimensional transition metal dichalcogenides is essential for tuning their electronic and optoelectronic properties. In this work, we demonstrate a robust approach for substitution of vanadium in tungsten diselenide (WSe$_2$) via the selenization of pre-deposited V$_2$O$_5$/WO$_3$ thin films. By adjusting the thickness of the vanadium oxide layer, the V concentration in W$_{1-x}$V$_x$Se$_2$ is systematically varied. Electrical measurements on field-effect transistors reveal a substantial enhancement in hole conduction, with drain current increasing by nearly three orders of magnitude compared to undoped WSe$_2$. Temperature-dependent electrical resistivity indicates a clear insulator-to-metal transition with increasing V content, likely due to band structure modifications. Concurrently, the photoconductive gain decreases, suggesting enhanced recombination and charge screening effects. These results establish vanadium doping via selenization of V$_2$O$_5$/WO$_3$ films as a scalable strategy for modulating the transport and photoresponse of WSe$_2$, offering promising implications for wafer-scale optoelectronic device integration. |
| title | Selenization of V$_2$O$_5$/WO$_3$ Bilayers for Tuned Optoelectronic Response of WSe$_2$ Films |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2505.22800 |