Salvato in:
| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2505.22800 |
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Sommario:
- Scalable and controlled doping of two-dimensional transition metal dichalcogenides is essential for tuning their electronic and optoelectronic properties. In this work, we demonstrate a robust approach for substitution of vanadium in tungsten diselenide (WSe$_2$) via the selenization of pre-deposited V$_2$O$_5$/WO$_3$ thin films. By adjusting the thickness of the vanadium oxide layer, the V concentration in W$_{1-x}$V$_x$Se$_2$ is systematically varied. Electrical measurements on field-effect transistors reveal a substantial enhancement in hole conduction, with drain current increasing by nearly three orders of magnitude compared to undoped WSe$_2$. Temperature-dependent electrical resistivity indicates a clear insulator-to-metal transition with increasing V content, likely due to band structure modifications. Concurrently, the photoconductive gain decreases, suggesting enhanced recombination and charge screening effects. These results establish vanadium doping via selenization of V$_2$O$_5$/WO$_3$ films as a scalable strategy for modulating the transport and photoresponse of WSe$_2$, offering promising implications for wafer-scale optoelectronic device integration.