Saved in:
Bibliographic Details
Main Authors: Liao, Wei-Cheng, Liu, Haoyu, Tan, Weilun, Keagy, Josiah, Chen, Jia-mou, Shi, Jing
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2505.24031
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866912403717881856
author Liao, Wei-Cheng
Liu, Haoyu
Tan, Weilun
Keagy, Josiah
Chen, Jia-mou
Shi, Jing
author_facet Liao, Wei-Cheng
Liu, Haoyu
Tan, Weilun
Keagy, Josiah
Chen, Jia-mou
Shi, Jing
contents Electrical transport measurements in heterostructures of antiferromagnetic Cr2O3 bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of the Cr2O3 undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While large Pt devices sensing multiple up/down domains can produce indistinguishable Hall signal jumps due to different initial Néel vector orientations, smaller Pt devices that sense single domains isolate the proximity-induced Hall signals. This allows direct electrical detection of Néel vector reorientation across the spin-flop transition in single domain regions. Furthermore, the single-domain state can be prepared by magnetic field cooling or magnetoelectric cooling. We demonstrate a method to control and characterize almost the three-dimensional orientation of single-domain Néel vectors by exploiting Hall measurements and cooling techniques, crucial for future antiferromagnetic spintronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2505_24031
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electrical Detection of Single-Domain Néel Vector Reorientation across the Spin-Flop Transition in Cr2O3 Crystals
Liao, Wei-Cheng
Liu, Haoyu
Tan, Weilun
Keagy, Josiah
Chen, Jia-mou
Shi, Jing
Materials Science
Electrical transport measurements in heterostructures of antiferromagnetic Cr2O3 bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of the Cr2O3 undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While large Pt devices sensing multiple up/down domains can produce indistinguishable Hall signal jumps due to different initial Néel vector orientations, smaller Pt devices that sense single domains isolate the proximity-induced Hall signals. This allows direct electrical detection of Néel vector reorientation across the spin-flop transition in single domain regions. Furthermore, the single-domain state can be prepared by magnetic field cooling or magnetoelectric cooling. We demonstrate a method to control and characterize almost the three-dimensional orientation of single-domain Néel vectors by exploiting Hall measurements and cooling techniques, crucial for future antiferromagnetic spintronic applications.
title Electrical Detection of Single-Domain Néel Vector Reorientation across the Spin-Flop Transition in Cr2O3 Crystals
topic Materials Science
url https://arxiv.org/abs/2505.24031