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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2505.24031 |
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| _version_ | 1866912403717881856 |
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| author | Liao, Wei-Cheng Liu, Haoyu Tan, Weilun Keagy, Josiah Chen, Jia-mou Shi, Jing |
| author_facet | Liao, Wei-Cheng Liu, Haoyu Tan, Weilun Keagy, Josiah Chen, Jia-mou Shi, Jing |
| contents | Electrical transport measurements in heterostructures of antiferromagnetic Cr2O3 bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of the Cr2O3 undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While large Pt devices sensing multiple up/down domains can produce indistinguishable Hall signal jumps due to different initial Néel vector orientations, smaller Pt devices that sense single domains isolate the proximity-induced Hall signals. This allows direct electrical detection of Néel vector reorientation across the spin-flop transition in single domain regions. Furthermore, the single-domain state can be prepared by magnetic field cooling or magnetoelectric cooling. We demonstrate a method to control and characterize almost the three-dimensional orientation of single-domain Néel vectors by exploiting Hall measurements and cooling techniques, crucial for future antiferromagnetic spintronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_24031 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electrical Detection of Single-Domain Néel Vector Reorientation across the Spin-Flop Transition in Cr2O3 Crystals Liao, Wei-Cheng Liu, Haoyu Tan, Weilun Keagy, Josiah Chen, Jia-mou Shi, Jing Materials Science Electrical transport measurements in heterostructures of antiferromagnetic Cr2O3 bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of the Cr2O3 undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While large Pt devices sensing multiple up/down domains can produce indistinguishable Hall signal jumps due to different initial Néel vector orientations, smaller Pt devices that sense single domains isolate the proximity-induced Hall signals. This allows direct electrical detection of Néel vector reorientation across the spin-flop transition in single domain regions. Furthermore, the single-domain state can be prepared by magnetic field cooling or magnetoelectric cooling. We demonstrate a method to control and characterize almost the three-dimensional orientation of single-domain Néel vectors by exploiting Hall measurements and cooling techniques, crucial for future antiferromagnetic spintronic applications. |
| title | Electrical Detection of Single-Domain Néel Vector Reorientation across the Spin-Flop Transition in Cr2O3 Crystals |
| topic | Materials Science |
| url | https://arxiv.org/abs/2505.24031 |