Exploring Domain Wall Pinning in Ferroelectrics via Automated High Throughput AFM
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866910975077122048 |
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| author | Barakati, Kamyar Liu, Yu Funakubo, Hiroshi Kalinin, Sergei V. |
| author_facet | Barakati, Kamyar Liu, Yu Funakubo, Hiroshi Kalinin, Sergei V. |
| contents | Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe microscopy techniques. The pinning centers and preexisting domain walls are usually sparse within image plane, precluding the use of dense hyperspectral imaging modes and requiring time-consuming human experimentation. Here, a large area epitaxial PbTiO$_3$ film on cubic KTaO$_3$ were investigated to quantify the electric field driven dynamics of the polar-strain domain structures using ML-controlled automated Piezoresponse Force Microscopy. Analysis of 1500 switching events reveals that domain wall displacement depends not only on field parameters but also on the local ferroelectric-ferroelastic configuration. For example, twin boundaries in polydomains regions like a$_1^-$/$c^+$ $\parallel$ a$_2^-$/$c^-$ stay pinned up to a certain level of bias magnitude and change only marginally as the bias increases from 20V to 30V, whereas single variant boundaries like a$_2^+$/$c^+$ $\parallel$ a$_2^-$/$c^-$ stack are already activated at 20V. These statistics on the possible ferroelectric and ferroelastic wall orientations, together with the automated, high-throughput AFM workflow, can be distilled into a predictive map that links domain configurations to pulse parameters. This microstructure-specific rule set forms the foundation for designing ferroelectric memories. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_24062 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Exploring Domain Wall Pinning in Ferroelectrics via Automated High Throughput AFM Barakati, Kamyar Liu, Yu Funakubo, Hiroshi Kalinin, Sergei V. Materials Science Computer Vision and Pattern Recognition Machine Learning Applied Physics Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe microscopy techniques. The pinning centers and preexisting domain walls are usually sparse within image plane, precluding the use of dense hyperspectral imaging modes and requiring time-consuming human experimentation. Here, a large area epitaxial PbTiO$_3$ film on cubic KTaO$_3$ were investigated to quantify the electric field driven dynamics of the polar-strain domain structures using ML-controlled automated Piezoresponse Force Microscopy. Analysis of 1500 switching events reveals that domain wall displacement depends not only on field parameters but also on the local ferroelectric-ferroelastic configuration. For example, twin boundaries in polydomains regions like a$_1^-$/$c^+$ $\parallel$ a$_2^-$/$c^-$ stay pinned up to a certain level of bias magnitude and change only marginally as the bias increases from 20V to 30V, whereas single variant boundaries like a$_2^+$/$c^+$ $\parallel$ a$_2^-$/$c^-$ stack are already activated at 20V. These statistics on the possible ferroelectric and ferroelastic wall orientations, together with the automated, high-throughput AFM workflow, can be distilled into a predictive map that links domain configurations to pulse parameters. This microstructure-specific rule set forms the foundation for designing ferroelectric memories. |
| title | Exploring Domain Wall Pinning in Ferroelectrics via Automated High Throughput AFM |
| topic | Materials Science Computer Vision and Pattern Recognition Machine Learning Applied Physics |
| url | https://arxiv.org/abs/2505.24062 |