Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe$_2$
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arXiv
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| Auteurs principaux: | , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866913021328097280 |
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| author | Icking, E. Wörtche, F. Cummings, A. W. Wörtche, A. Watanabe, K. Taniguchi, T. Volk, C. Beschoten, B. Stampfer, C. |
| author_facet | Icking, E. Wörtche, F. Cummings, A. W. Wörtche, A. Watanabe, K. Taniguchi, T. Volk, C. Beschoten, B. Stampfer, C. |
| contents | Proximity coupling of bilayer graphene (BLG) to transition metal dichalcogenides (TMDs) offers a promising route to engineer gate-tunable spin-orbit coupling (SOC) while preserving BLG's exceptional electronic properties. This tunability arises from the layer-asymmetric electronic structure of gapped BLG, where SOC acts predominantly on the layer in contact with the TMD. Here, we present high-quality BLG/WSe$_2$ devices with a proximity-induced SOC gap and excellent electrostatic control. Operating in a quasi-ballistic regime, our double-gated heterostructures allow to form gate-defined p-n-p cavities and show clear weak anti-localization (WAL) features consistent with Rashba-type SOC. At lower hole densities, a transition to weak localization (WL) is observed, signaling transport through a single spin-split valence band. These findings - in agreement with calculations - provide direct spectroscopic evidence of proximity-induced spin-split band in BLG and underscore the potential of BLG/TMD heterostructures for spintronics and spin-based quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_24632 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe$_2$ Icking, E. Wörtche, F. Cummings, A. W. Wörtche, A. Watanabe, K. Taniguchi, T. Volk, C. Beschoten, B. Stampfer, C. Mesoscale and Nanoscale Physics Materials Science Proximity coupling of bilayer graphene (BLG) to transition metal dichalcogenides (TMDs) offers a promising route to engineer gate-tunable spin-orbit coupling (SOC) while preserving BLG's exceptional electronic properties. This tunability arises from the layer-asymmetric electronic structure of gapped BLG, where SOC acts predominantly on the layer in contact with the TMD. Here, we present high-quality BLG/WSe$_2$ devices with a proximity-induced SOC gap and excellent electrostatic control. Operating in a quasi-ballistic regime, our double-gated heterostructures allow to form gate-defined p-n-p cavities and show clear weak anti-localization (WAL) features consistent with Rashba-type SOC. At lower hole densities, a transition to weak localization (WL) is observed, signaling transport through a single spin-split valence band. These findings - in agreement with calculations - provide direct spectroscopic evidence of proximity-induced spin-split band in BLG and underscore the potential of BLG/TMD heterostructures for spintronics and spin-based quantum technologies. |
| title | Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe$_2$ |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2505.24632 |