First principles computations of the Stark shift of a defect-bound exciton: the case of the T center in silicon

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Bibliographic Details
Main Authors:	Alaerts, Louis, Xiong, Yihuang, Griffin, Sinéad M., Hautier, Geoffroy
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2505.24747