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First principles computations of the Stark shift of a defect-bound exciton: the case of the T center in silicon

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Alaerts, Louis, Xiong, Yihuang, Griffin, Sinéad M., Hautier, Geoffroy
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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