First principles computations of the Stark shift of a defect-bound exciton: the case of the T center in silicon

Documenti analoghi

• A first principles study of the Stark shift effect on the zero-phonon line of the NV center in diamond
  di: Alaerts, Louis, et al.
  Pubblicazione: (2024)
• Discovery of T center-like quantum defects in silicon
  di: Xiong, Yihuang, et al.
  Pubblicazione: (2024)
• $Δ$SCF in \texttt{VASP} for excited-state defect computations: tips and pitfalls
  di: Xiong, Yihuang, et al.
  Pubblicazione: (2025)
• Identifying high performance spectrally-stable quantum defects in diamond
  di: Xiong, Yihuang, et al.
  Pubblicazione: (2025)
• First-principles study of defects and doping limits in CaO
  di: Yuan, Zhenkun, et al.
  Pubblicazione: (2024)