Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics

Fuente: arXiv
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Main Authors: Kumar, Vivek, Ganguli, Nirmal
Format: Preprint
Published: 2025
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author Kumar, Vivek
Ganguli, Nirmal
author_facet Kumar, Vivek
Ganguli, Nirmal
contents Antiferromagnetic spintronics, a promising technology for ultra-fast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We design a heterostructure of BaMnO$_3|$KTaO$_3$ with the idea of proximity-inducing strong Rashba spin-orbit interaction from KTaO$_3$ part to BaMnO$_3$ part, where the latter is already a robust antiferromagnet. Within our DFT calculations, the heterostructure reveals BaMnO$_3$ bands near the Fermi level with a significant magnetic moment per Mn atom and a decent ordering temperature. Further, the BaMnO$_3$ bands in the heterostructure exhibit linear Rashba interaction with a sizable Rashba coefficient, owing to its proximity to KTaO$_3$. Our work can motivate future research by demonstrating the road map to proximity-induced Rashba interaction for antiferromagnetic spintronics.
format Preprint
id arxiv_https___arxiv_org_abs_2506_01861
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics
Kumar, Vivek
Ganguli, Nirmal
Materials Science
Strongly Correlated Electrons
Antiferromagnetic spintronics, a promising technology for ultra-fast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We design a heterostructure of BaMnO$_3|$KTaO$_3$ with the idea of proximity-inducing strong Rashba spin-orbit interaction from KTaO$_3$ part to BaMnO$_3$ part, where the latter is already a robust antiferromagnet. Within our DFT calculations, the heterostructure reveals BaMnO$_3$ bands near the Fermi level with a significant magnetic moment per Mn atom and a decent ordering temperature. Further, the BaMnO$_3$ bands in the heterostructure exhibit linear Rashba interaction with a sizable Rashba coefficient, owing to its proximity to KTaO$_3$. Our work can motivate future research by demonstrating the road map to proximity-induced Rashba interaction for antiferromagnetic spintronics.
title Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics
topic Materials Science
Strongly Correlated Electrons
url https://arxiv.org/abs/2506.01861