Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866918118185500672 |
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| author | Kumar, Vivek Ganguli, Nirmal |
| author_facet | Kumar, Vivek Ganguli, Nirmal |
| contents | Antiferromagnetic spintronics, a promising technology for ultra-fast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We design a heterostructure of BaMnO$_3|$KTaO$_3$ with the idea of proximity-inducing strong Rashba spin-orbit interaction from KTaO$_3$ part to BaMnO$_3$ part, where the latter is already a robust antiferromagnet. Within our DFT calculations, the heterostructure reveals BaMnO$_3$ bands near the Fermi level with a significant magnetic moment per Mn atom and a decent ordering temperature. Further, the BaMnO$_3$ bands in the heterostructure exhibit linear Rashba interaction with a sizable Rashba coefficient, owing to its proximity to KTaO$_3$. Our work can motivate future research by demonstrating the road map to proximity-induced Rashba interaction for antiferromagnetic spintronics. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2506_01861 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics Kumar, Vivek Ganguli, Nirmal Materials Science Strongly Correlated Electrons Antiferromagnetic spintronics, a promising technology for ultra-fast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We design a heterostructure of BaMnO$_3|$KTaO$_3$ with the idea of proximity-inducing strong Rashba spin-orbit interaction from KTaO$_3$ part to BaMnO$_3$ part, where the latter is already a robust antiferromagnet. Within our DFT calculations, the heterostructure reveals BaMnO$_3$ bands near the Fermi level with a significant magnetic moment per Mn atom and a decent ordering temperature. Further, the BaMnO$_3$ bands in the heterostructure exhibit linear Rashba interaction with a sizable Rashba coefficient, owing to its proximity to KTaO$_3$. Our work can motivate future research by demonstrating the road map to proximity-induced Rashba interaction for antiferromagnetic spintronics. |
| title | Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2506.01861 |