Enhancing van-Hove singularities in SrRuO$_3$ films by vacancy engineerings
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arXiv
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| Auteurs principaux: | , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866913871131836416 |
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| author | Lee, Moon Hyoung Lee, Hyungwoo Rhim, Jun-Won |
| author_facet | Lee, Moon Hyoung Lee, Hyungwoo Rhim, Jun-Won |
| contents | Flat bands, characterized by their localized electronic states and van Hove singularities, provide an ideal platform for exploring many-body physics. However, transition metal oxides hosting flat bands are quite rare. In this study, we investigate the origin of the existing nearly flat bands (NFBs) in SrRuO$_3$ thin films and demonstrate how to increase the number of them through structural modifications. Using a tight-binding model that replicates experimental band structures, we analyze the SrRuO$_3$ monolayer, revealing the origin of its NFBs along the $x$ and $y$ directions. These NFBs arise from destructive interference stabilizing strip-type compact localized states. By introducing periodic Ru-site vacancies, additional NFBs are generated, classified as partial or complete, depending on their Brillouin zone coverage. The compact localized states associated with these NFBs are identified, providing insight into their physical origin. For a 4-layer SrRuO$_3$ multilayer film, we uncover many partial NFBs along the $Γ$X and XM directions and reveal the distinct origin of their development. Our findings highlight the potential of engineering flat bands in SrRuO$_3$ films, offering new opportunities for exploring correlated electronic phases and expanding the material platform for flat-band physics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_01894 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhancing van-Hove singularities in SrRuO$_3$ films by vacancy engineerings Lee, Moon Hyoung Lee, Hyungwoo Rhim, Jun-Won Strongly Correlated Electrons Flat bands, characterized by their localized electronic states and van Hove singularities, provide an ideal platform for exploring many-body physics. However, transition metal oxides hosting flat bands are quite rare. In this study, we investigate the origin of the existing nearly flat bands (NFBs) in SrRuO$_3$ thin films and demonstrate how to increase the number of them through structural modifications. Using a tight-binding model that replicates experimental band structures, we analyze the SrRuO$_3$ monolayer, revealing the origin of its NFBs along the $x$ and $y$ directions. These NFBs arise from destructive interference stabilizing strip-type compact localized states. By introducing periodic Ru-site vacancies, additional NFBs are generated, classified as partial or complete, depending on their Brillouin zone coverage. The compact localized states associated with these NFBs are identified, providing insight into their physical origin. For a 4-layer SrRuO$_3$ multilayer film, we uncover many partial NFBs along the $Γ$X and XM directions and reveal the distinct origin of their development. Our findings highlight the potential of engineering flat bands in SrRuO$_3$ films, offering new opportunities for exploring correlated electronic phases and expanding the material platform for flat-band physics. |
| title | Enhancing van-Hove singularities in SrRuO$_3$ films by vacancy engineerings |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2506.01894 |