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Main Authors: Pulkkinen, Aki, Kothalawala, Veenavee Nipunika, Suzuki, Kosuke, Barbiellini, Bernardo, Nokelainen, Johannes, Chiu, Wei-Chi, Singh, Bahadur, Lin, Hsin, Pandey, Alok K., Yabuuchi, Naoaki, Tsuji, Naruki, Sakurai, Yoshiharu, Sakurai, Hiroshi, Minár, Ján, Bansil, Arun
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2506.02833
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author Pulkkinen, Aki
Kothalawala, Veenavee Nipunika
Suzuki, Kosuke
Barbiellini, Bernardo
Nokelainen, Johannes
Chiu, Wei-Chi
Singh, Bahadur
Lin, Hsin
Pandey, Alok K.
Yabuuchi, Naoaki
Tsuji, Naruki
Sakurai, Yoshiharu
Sakurai, Hiroshi
Minár, Ján
Bansil, Arun
author_facet Pulkkinen, Aki
Kothalawala, Veenavee Nipunika
Suzuki, Kosuke
Barbiellini, Bernardo
Nokelainen, Johannes
Chiu, Wei-Chi
Singh, Bahadur
Lin, Hsin
Pandey, Alok K.
Yabuuchi, Naoaki
Tsuji, Naruki
Sakurai, Yoshiharu
Sakurai, Hiroshi
Minár, Ján
Bansil, Arun
contents We discuss electron redistribution during the semiconductor-to-Dirac semimetal transition in Na-Sb-Bi alloys using x-ray Compton scattering experiments combined with first-principles electronic structure modeling. A robust signature of the semiconductor-to-Dirac semimetal transition is identified in the spherically averaged Compton profile. We demonstrate how the number of electrons involved in this transition can be estimated to provide a novel descriptor for quantifying the strength of spin-orbit coupling responsible for driving the transition. The associated theoretical deviation of the Born charge of Na in Na$_3$Bi from the expected ionic charge of +1 is found to be consistent with the corresponding experimental value of about 10%. Our study also shows the sensitivity of the Compton scattering technique toward capturing the spillover of Bi 6p relativistic states onto Na sites.
format Preprint
id arxiv_https___arxiv_org_abs_2506_02833
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Probing the semiconductor-to-dirac semimetal transition in Na-Sb-Bi alloys with x-ray Compton scattering
Pulkkinen, Aki
Kothalawala, Veenavee Nipunika
Suzuki, Kosuke
Barbiellini, Bernardo
Nokelainen, Johannes
Chiu, Wei-Chi
Singh, Bahadur
Lin, Hsin
Pandey, Alok K.
Yabuuchi, Naoaki
Tsuji, Naruki
Sakurai, Yoshiharu
Sakurai, Hiroshi
Minár, Ján
Bansil, Arun
Materials Science
We discuss electron redistribution during the semiconductor-to-Dirac semimetal transition in Na-Sb-Bi alloys using x-ray Compton scattering experiments combined with first-principles electronic structure modeling. A robust signature of the semiconductor-to-Dirac semimetal transition is identified in the spherically averaged Compton profile. We demonstrate how the number of electrons involved in this transition can be estimated to provide a novel descriptor for quantifying the strength of spin-orbit coupling responsible for driving the transition. The associated theoretical deviation of the Born charge of Na in Na$_3$Bi from the expected ionic charge of +1 is found to be consistent with the corresponding experimental value of about 10%. Our study also shows the sensitivity of the Compton scattering technique toward capturing the spillover of Bi 6p relativistic states onto Na sites.
title Probing the semiconductor-to-dirac semimetal transition in Na-Sb-Bi alloys with x-ray Compton scattering
topic Materials Science
url https://arxiv.org/abs/2506.02833