Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Tiberi, M. Montanaro, A. Wen, C. Zhang, J. Balci, O. Shinde, S. M. Sharma, S. Meersha, A. Shekhar, H. Muench, J. E. Conran, B. R. Teo, K. B. K. Ebert, M. Yan, X. Tran, Y. Banakar, M. Littlejohns, C. Reed, G. T. Romagnoli, M. Ruocco, A. Sorianello, V. Ferrari, A. C. |
| author_facet | Tiberi, M. Montanaro, A. Wen, C. Zhang, J. Balci, O. Shinde, S. M. Sharma, S. Meersha, A. Shekhar, H. Muench, J. E. Conran, B. R. Teo, K. B. K. Ebert, M. Yan, X. Tran, Y. Banakar, M. Littlejohns, C. Reed, G. T. Romagnoli, M. Ruocco, A. Sorianello, V. Ferrari, A. C. |
| contents | The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth and 80Gbit/s data rate, in both O and C bands, using a fabrication tailored for wafer-scale integration. We measure a data rate$\sim$1.6 times larger than previously reported for graphene. We scale the modulator's active area down to 22$μ$m$^2$, achieving a dynamic power consumption$\sim$58fJ/bit, $\sim$3 times lower than previous graphene modulators and Mach-Zehnder modulators based on Si or lithium niobate. We show devices with$\sim$0.037dB/V$μ$m modulation efficiency,$\sim$16 times better than previous demonstrations based on graphene. This paves the way to wafer-scale production of graphene modulators on Si useful for Tbit/s optical transceivers and energy-efficient AI |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_03281 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers Tiberi, M. Montanaro, A. Wen, C. Zhang, J. Balci, O. Shinde, S. M. Sharma, S. Meersha, A. Shekhar, H. Muench, J. E. Conran, B. R. Teo, K. B. K. Ebert, M. Yan, X. Tran, Y. Banakar, M. Littlejohns, C. Reed, G. T. Romagnoli, M. Ruocco, A. Sorianello, V. Ferrari, A. C. Materials Science Mesoscale and Nanoscale Physics The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth and 80Gbit/s data rate, in both O and C bands, using a fabrication tailored for wafer-scale integration. We measure a data rate$\sim$1.6 times larger than previously reported for graphene. We scale the modulator's active area down to 22$μ$m$^2$, achieving a dynamic power consumption$\sim$58fJ/bit, $\sim$3 times lower than previous graphene modulators and Mach-Zehnder modulators based on Si or lithium niobate. We show devices with$\sim$0.037dB/V$μ$m modulation efficiency,$\sim$16 times better than previous demonstrations based on graphene. This paves the way to wafer-scale production of graphene modulators on Si useful for Tbit/s optical transceivers and energy-efficient AI |
| title | Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.03281 |