Critical transport behavior in quantum dot solids
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arXiv
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| Hauptverfasser: | , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909636717707264 |
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| author | Crawford, Zachary Goga, Adam Kovtun, Mikael Zimanyi, Gergely |
| author_facet | Crawford, Zachary Goga, Adam Kovtun, Mikael Zimanyi, Gergely |
| contents | Due to recent advances, silicon solar cells are rapidly approaching the Shockley-Queisser limit of 33% efficiency. Quantum Dot (QD) solar cells have the potential to surpass this limit and enable a new generation of photovoltaic technologies beyond the capabilities of any existing solar energy modalities. The creation of the first epitaxially-fused quantum dot solids showing broad phase coherence and metallicity necessary for solar implementation has not yet been achieved, and the metal-insulator transition in these materials needs to be explored. We have created a new model of electron transport through QD solids, informed by 3D-tomography of QD solid samples, which considers disorder in both the on-site and hopping terms of the commonly studied Anderson Hamiltonian. We used the transfer matrix method and finite-size scaling to create a dynamic metal-insulator transition phase diagram. For a surprisingly large portion of the parameter space, our model shows a critical exponent distinct from the expected value for the Anderson transition. We show the existence of a crossover region from the universality class of the Anderson transition (AI) to the Chiral Orthogonal class (BDI) due to the addition of weak kinetic (hopping) disorder. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_03676 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Critical transport behavior in quantum dot solids Crawford, Zachary Goga, Adam Kovtun, Mikael Zimanyi, Gergely Mesoscale and Nanoscale Physics Disordered Systems and Neural Networks Computational Physics Due to recent advances, silicon solar cells are rapidly approaching the Shockley-Queisser limit of 33% efficiency. Quantum Dot (QD) solar cells have the potential to surpass this limit and enable a new generation of photovoltaic technologies beyond the capabilities of any existing solar energy modalities. The creation of the first epitaxially-fused quantum dot solids showing broad phase coherence and metallicity necessary for solar implementation has not yet been achieved, and the metal-insulator transition in these materials needs to be explored. We have created a new model of electron transport through QD solids, informed by 3D-tomography of QD solid samples, which considers disorder in both the on-site and hopping terms of the commonly studied Anderson Hamiltonian. We used the transfer matrix method and finite-size scaling to create a dynamic metal-insulator transition phase diagram. For a surprisingly large portion of the parameter space, our model shows a critical exponent distinct from the expected value for the Anderson transition. We show the existence of a crossover region from the universality class of the Anderson transition (AI) to the Chiral Orthogonal class (BDI) due to the addition of weak kinetic (hopping) disorder. |
| title | Critical transport behavior in quantum dot solids |
| topic | Mesoscale and Nanoscale Physics Disordered Systems and Neural Networks Computational Physics |
| url | https://arxiv.org/abs/2506.03676 |