Efficient absolute interface energy calculations for heterostructures: Synergy between localized basis sets and surface passivation techniques

Ähnliche Einträge

• Inevitable Si surface passivation prior to III-V/Si epitaxy: A strong impact on wetting properties
  von: Chandrasekharan, S. Pallikkara, et al.
  Veröffentlicht: (2023)
• Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experiments
  von: Chandrasekharan, Sreejith Pallikkara, et al.
  Veröffentlicht: (2025)
• Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic step
  von: Gupta, D., et al.
  Veröffentlicht: (2024)
• Computational assessment of non-polar and polar GaP terminations for photoelectrochemical water splitting
  von: Apergi, Sofia, et al.
  Veröffentlicht: (2025)
• Super-capacitors interfaced with quantum dots at the electrolyte/electrode interface: capacitance gain and fluorescence line-width narrowing
  von: Grebel, H.
  Veröffentlicht: (2025)