Substrate pre-sputtering for layer-by-layer van der Waals epitaxy of 2D materials
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866914060142903296 |
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| author | Rajan, A. Ramirez, M. Kushwaha, N. Buchberger, S. McLaren, M. King, P. D. C. |
| author_facet | Rajan, A. Ramirez, M. Kushwaha, N. Buchberger, S. McLaren, M. King, P. D. C. |
| contents | Two-dimensional transition metal chalcogenides, with their atomically layered structure, favourable electronic and mechanical properties, and often strong spin-orbit coupling, are ideal systems for fundamental studies and for applications ranging from spintronics to optoelectronics. Their bottom-up synthesis via epitaxial techniques such as molecular-beam epitaxy (MBE) has, however, proved challenging. Here, we develop a simple substrate pre-treatment process utilising exposure to a low-energy noble gas plasma. We show how this dramatically enhances nucleation of an MBE-grown epilayer atop, and through this, realise a true layer-by-layer growth mode. We further demonstrate the possibility of tuning the resulting growth dynamics via control of the species and dose of the plasma exposure. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_04388 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Substrate pre-sputtering for layer-by-layer van der Waals epitaxy of 2D materials Rajan, A. Ramirez, M. Kushwaha, N. Buchberger, S. McLaren, M. King, P. D. C. Materials Science Mesoscale and Nanoscale Physics Two-dimensional transition metal chalcogenides, with their atomically layered structure, favourable electronic and mechanical properties, and often strong spin-orbit coupling, are ideal systems for fundamental studies and for applications ranging from spintronics to optoelectronics. Their bottom-up synthesis via epitaxial techniques such as molecular-beam epitaxy (MBE) has, however, proved challenging. Here, we develop a simple substrate pre-treatment process utilising exposure to a low-energy noble gas plasma. We show how this dramatically enhances nucleation of an MBE-grown epilayer atop, and through this, realise a true layer-by-layer growth mode. We further demonstrate the possibility of tuning the resulting growth dynamics via control of the species and dose of the plasma exposure. |
| title | Substrate pre-sputtering for layer-by-layer van der Waals epitaxy of 2D materials |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.04388 |