Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride
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arXiv
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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866912501986230272 |
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| author | Sadi, Mohammad Abdullah Basso, Luca Fehr, David A Gao, Xingyu Vaidya, Sumukh Riendeau, Emmeline G Joshi, Gajadhar Li, Tongcang Flatté, Michael E Mounce, Andrew M Chen, Yong P |
| author_facet | Sadi, Mohammad Abdullah Basso, Luca Fehr, David A Gao, Xingyu Vaidya, Sumukh Riendeau, Emmeline G Joshi, Gajadhar Li, Tongcang Flatté, Michael E Mounce, Andrew M Chen, Yong P |
| contents | Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ($V_{\text{B}}^-$). Despite hBN being transferrable to close proximity to samples, spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of $V_{\text{B}}^-$ spin defects in hBN driven by circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwave shifted in phase from a RFSoC FPGA to generate circularly polarized microwaves. This enables selective spin $|0\rangle\rightarrow|-1\rangle$ or $|0\rangle\rightarrow|1\rangle$ excitation of $V_{\text{B}}^-$ defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of magnetic field on spin-state selectivity. Our technique enhances the potential of hBN platform for quantum sensing through better spin state control and magnetic sensitivity particularly at low fields. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_04448 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride Sadi, Mohammad Abdullah Basso, Luca Fehr, David A Gao, Xingyu Vaidya, Sumukh Riendeau, Emmeline G Joshi, Gajadhar Li, Tongcang Flatté, Michael E Mounce, Andrew M Chen, Yong P Quantum Physics Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ($V_{\text{B}}^-$). Despite hBN being transferrable to close proximity to samples, spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of $V_{\text{B}}^-$ spin defects in hBN driven by circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwave shifted in phase from a RFSoC FPGA to generate circularly polarized microwaves. This enables selective spin $|0\rangle\rightarrow|-1\rangle$ or $|0\rangle\rightarrow|1\rangle$ excitation of $V_{\text{B}}^-$ defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of magnetic field on spin-state selectivity. Our technique enhances the potential of hBN platform for quantum sensing through better spin state control and magnetic sensitivity particularly at low fields. |
| title | Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2506.04448 |