Strongly enhanced topological quantum phases in dual-surface AlO$_x$-encapsulated MnBi$_2$Te$_4$

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Hauptverfasser: Lian, Zichen, Wang, Yongqian, Wang, Yongchao, Xu, Liangcai, Zhang, Jinsong, Liu, Chang, Wang, Yayu
Format: Preprint
Veröffentlicht: 2025
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author Lian, Zichen
Wang, Yongqian
Wang, Yongchao
Xu, Liangcai
Zhang, Jinsong
Liu, Chang
Wang, Yayu
author_facet Lian, Zichen
Wang, Yongqian
Wang, Yongchao
Xu, Liangcai
Zhang, Jinsong
Liu, Chang
Wang, Yayu
contents The topological quantum phases in antiferromagnetic topological insulator MnBi$_2$Te$_4$ hold promise for next-generation spintronics, but their experimental realization has been constrained by challenges in preparing high-quality devices. In this work, we report a new wax-assisted exfoliation and transfer method that enables the fabrication of MnBi$_2$Te$_4$ heterostructures with both surfaces encapsulated by AlO$_x$. This strategy strongly enhances the topological quantum phases in MnBi$_2$Te$_4$ flakes. We observe the robust axion insulator state in even-layer device with wide zero Hall plateau and high longitudinal resistivity, and the quantum anomalous Hall effect in odd-layer device with large hysteresis and sharp plateau transition. These results demonstrate that the combination of wax exfoliation and AlO$_x$ encapsulation provides great potentials for exploring novel topological quantum phenomena and potential applications in MnBi$_2$Te$_4$ and other two-dimensional materials.
format Preprint
id arxiv_https___arxiv_org_abs_2506_04901
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Strongly enhanced topological quantum phases in dual-surface AlO$_x$-encapsulated MnBi$_2$Te$_4$
Lian, Zichen
Wang, Yongqian
Wang, Yongchao
Xu, Liangcai
Zhang, Jinsong
Liu, Chang
Wang, Yayu
Materials Science
Mesoscale and Nanoscale Physics
The topological quantum phases in antiferromagnetic topological insulator MnBi$_2$Te$_4$ hold promise for next-generation spintronics, but their experimental realization has been constrained by challenges in preparing high-quality devices. In this work, we report a new wax-assisted exfoliation and transfer method that enables the fabrication of MnBi$_2$Te$_4$ heterostructures with both surfaces encapsulated by AlO$_x$. This strategy strongly enhances the topological quantum phases in MnBi$_2$Te$_4$ flakes. We observe the robust axion insulator state in even-layer device with wide zero Hall plateau and high longitudinal resistivity, and the quantum anomalous Hall effect in odd-layer device with large hysteresis and sharp plateau transition. These results demonstrate that the combination of wax exfoliation and AlO$_x$ encapsulation provides great potentials for exploring novel topological quantum phenomena and potential applications in MnBi$_2$Te$_4$ and other two-dimensional materials.
title Strongly enhanced topological quantum phases in dual-surface AlO$_x$-encapsulated MnBi$_2$Te$_4$
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2506.04901