Theory and computation of thermal-field emission from semiconductors
Fuente:
arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866913881793757184 |
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| author | Cárceles, Salvador Barranco Zadin, Veronika Mavalankar, Aquila Underwood, Ian Kyritsakis, Andreas |
| author_facet | Cárceles, Salvador Barranco Zadin, Veronika Mavalankar, Aquila Underwood, Ian Kyritsakis, Andreas |
| contents | Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by the lack of accurate 3D models for the simulation of thermal-field emission from semiconductors. Here we review and correct the equations of field emission from semiconductors and include them to expand GETELEC (General Tool for Electron Emission Calculations). Our method covers all electron emission regime (field, thermal, and intermediate), aiming to maximise the calculation accuracy while minimising the computational cost. GETELEC-2.0 is able to reproduce the characteristic non-linear I-V curves in Fowler-Nordheim coordinates obtained from semiconductors, giving insights about their nature. As well as providing an explanation to the lack of experimental observation of valence band electrons from semiconductors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_06198 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Theory and computation of thermal-field emission from semiconductors Cárceles, Salvador Barranco Zadin, Veronika Mavalankar, Aquila Underwood, Ian Kyritsakis, Andreas Materials Science Mesoscale and Nanoscale Physics Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by the lack of accurate 3D models for the simulation of thermal-field emission from semiconductors. Here we review and correct the equations of field emission from semiconductors and include them to expand GETELEC (General Tool for Electron Emission Calculations). Our method covers all electron emission regime (field, thermal, and intermediate), aiming to maximise the calculation accuracy while minimising the computational cost. GETELEC-2.0 is able to reproduce the characteristic non-linear I-V curves in Fowler-Nordheim coordinates obtained from semiconductors, giving insights about their nature. As well as providing an explanation to the lack of experimental observation of valence band electrons from semiconductors. |
| title | Theory and computation of thermal-field emission from semiconductors |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.06198 |