Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866913884868182016 |
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| author | Rudie, Justin Wang, Xiaoxin Kumar, Rajesh Abernathy, Grey Amoah, Sylvester Akwabli, Steven Stanchu, Hryhorii Grant, Perry C. Li, Baohua Du, Wei Liu, Jifeng Yu, Shui-Qing |
| author_facet | Rudie, Justin Wang, Xiaoxin Kumar, Rajesh Abernathy, Grey Amoah, Sylvester Akwabli, Steven Stanchu, Hryhorii Grant, Perry C. Li, Baohua Du, Wei Liu, Jifeng Yu, Shui-Qing |
| contents | GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength absorption in GeSn and low impact ionization ratio of Si. Due to lattice mismatch between Si and GeSn that would degrade GeSn material quality if with direct growth, a 240-nm-thick Ge buffer was utilized which simultaneously allows for the transporting photo generated electrons from GeSn absorber to Si multiplication layer. Spectral response showed the cut off wavelength beyond 2.1 μm at room temperature. Dart current and capacitance-voltage measurements indicated a punch-through voltage of -10 V. The measured responsivities were 0.55 A/W and 0.34 A/W under 1.55 μm and 1.9 μm excitation lasers, respectively. The maximum gain was obtained as 3.44 at 77 K under 1.9 μm laser. Even at 250 K, the calculated gain was greater than unity. Simulation of electric field distribution revealed that the GeSn is partially depleted at operating voltages, which can be improved by reducing the background doping levels in GeSn absorber and Ge buffer layer. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2506_06969 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer Rudie, Justin Wang, Xiaoxin Kumar, Rajesh Abernathy, Grey Amoah, Sylvester Akwabli, Steven Stanchu, Hryhorii Grant, Perry C. Li, Baohua Du, Wei Liu, Jifeng Yu, Shui-Qing Applied Physics GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength absorption in GeSn and low impact ionization ratio of Si. Due to lattice mismatch between Si and GeSn that would degrade GeSn material quality if with direct growth, a 240-nm-thick Ge buffer was utilized which simultaneously allows for the transporting photo generated electrons from GeSn absorber to Si multiplication layer. Spectral response showed the cut off wavelength beyond 2.1 μm at room temperature. Dart current and capacitance-voltage measurements indicated a punch-through voltage of -10 V. The measured responsivities were 0.55 A/W and 0.34 A/W under 1.55 μm and 1.9 μm excitation lasers, respectively. The maximum gain was obtained as 3.44 at 77 K under 1.9 μm laser. Even at 250 K, the calculated gain was greater than unity. Simulation of electric field distribution revealed that the GeSn is partially depleted at operating voltages, which can be improved by reducing the background doping levels in GeSn absorber and Ge buffer layer. |
| title | Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2506.06969 |