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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
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2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2506.07354 |
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| _version_ | 1866917512664317952 |
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| author | Yan, Chengyu Guan, Huai Zhang, Zhenyu Sun, Yiheng Chen, Qiao Zhao, Xinming Zhao, Chuanwen He, James Jun Wang, Shun |
| author_facet | Yan, Chengyu Guan, Huai Zhang, Zhenyu Sun, Yiheng Chen, Qiao Zhao, Xinming Zhao, Chuanwen He, James Jun Wang, Shun |
| contents | The discovery of the superconducting diode effect (SDE) has been cherished as a milestone in developing superconducting electronics. Tremendous efforts are being dedicated to realizing SDE in a wide variety of material platforms. Despite the diversity in the hosting materials and device designs, SDE is usually operated in a single mode which is enabled by either out-of-plane or in-plane magnetic field/magnetization. In this work, we report the realization of a dual-mode SDE in 2H-$\mathrm{NbS_2}$/2H-$\mathrm{NbSe_2}$ heterostructures where both the out-of-plane magnetic field $B_{\perp}$ and in-plane magnetic field $B_{||}$ can independently generate and manipulate SDE. The two modes share similar diode efficiency but differ in two aspects: 1. $B_{\perp}$-induced SDE is activated by a field on the order of 1 mT while $B_{||}$-induced SDE requires a field on the order of 100 mT; 2. $η$ of $B_{\perp}$-induced SDE exhibits a square-root like temperature dependence while $η$ of $B_{||}$-induced SDE takes a more linear-like one. We demonstrate that the dual-mode SDE is most likely a result of mirror symmetry breaking along multiple orientations. Thanks to the two orders difference in the operational field for the two modes, we propose a dual-functionality device scheme to showcase the potential of the dual-mode SDE in realizing advanced superconducting architecture, where fast polarity-switching functionality is implemented with $B_{\perp}$-induced SDE and high-fidelity functionality is enabled with $B_{\perp}$-induced SDE. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_07354 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Dual-mode superconducting diode effect enabled by in-plane and out-of-plane magnetic field Yan, Chengyu Guan, Huai Zhang, Zhenyu Sun, Yiheng Chen, Qiao Zhao, Xinming Zhao, Chuanwen He, James Jun Wang, Shun Superconductivity The discovery of the superconducting diode effect (SDE) has been cherished as a milestone in developing superconducting electronics. Tremendous efforts are being dedicated to realizing SDE in a wide variety of material platforms. Despite the diversity in the hosting materials and device designs, SDE is usually operated in a single mode which is enabled by either out-of-plane or in-plane magnetic field/magnetization. In this work, we report the realization of a dual-mode SDE in 2H-$\mathrm{NbS_2}$/2H-$\mathrm{NbSe_2}$ heterostructures where both the out-of-plane magnetic field $B_{\perp}$ and in-plane magnetic field $B_{||}$ can independently generate and manipulate SDE. The two modes share similar diode efficiency but differ in two aspects: 1. $B_{\perp}$-induced SDE is activated by a field on the order of 1 mT while $B_{||}$-induced SDE requires a field on the order of 100 mT; 2. $η$ of $B_{\perp}$-induced SDE exhibits a square-root like temperature dependence while $η$ of $B_{||}$-induced SDE takes a more linear-like one. We demonstrate that the dual-mode SDE is most likely a result of mirror symmetry breaking along multiple orientations. Thanks to the two orders difference in the operational field for the two modes, we propose a dual-functionality device scheme to showcase the potential of the dual-mode SDE in realizing advanced superconducting architecture, where fast polarity-switching functionality is implemented with $B_{\perp}$-induced SDE and high-fidelity functionality is enabled with $B_{\perp}$-induced SDE. |
| title | Dual-mode superconducting diode effect enabled by in-plane and out-of-plane magnetic field |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2506.07354 |