Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866908577781776384 |
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| author | Tilgner, Niclas Mamiyev, Zamin Wolff, Susanne Schädlich, Philip Göhler, Fabian Tegenkamp, Christoph Seyller, Thomas |
| author_facet | Tilgner, Niclas Mamiyev, Zamin Wolff, Susanne Schädlich, Philip Göhler, Fabian Tegenkamp, Christoph Seyller, Thomas |
| contents | Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two-dimensional configuration. This work examines Si intercalation of epitaxial graphene on SiC(0001) using three preparation methods. Dangling bond states at the interface were found to undergo a Mott-Hubbard metal-insulator transition as a result of a significant on-site repulsion. Comparing this heterostructure consisting of graphene and a Mott insulator with a similar system without graphene, reveals the screening ability of graphene's conduction electrons on the on-site repulsion. The system presented here can serve as a template for further research on Mott insulators with variable band gap. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_07545 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface Tilgner, Niclas Mamiyev, Zamin Wolff, Susanne Schädlich, Philip Göhler, Fabian Tegenkamp, Christoph Seyller, Thomas Materials Science Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two-dimensional configuration. This work examines Si intercalation of epitaxial graphene on SiC(0001) using three preparation methods. Dangling bond states at the interface were found to undergo a Mott-Hubbard metal-insulator transition as a result of a significant on-site repulsion. Comparing this heterostructure consisting of graphene and a Mott insulator with a similar system without graphene, reveals the screening ability of graphene's conduction electrons on the on-site repulsion. The system presented here can serve as a template for further research on Mott insulators with variable band gap. |
| title | Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface |
| topic | Materials Science |
| url | https://arxiv.org/abs/2506.07545 |