Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer
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arXiv
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| Natura: | Preprint |
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2025
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| _version_ | 1866908399624519680 |
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| author | Bekele, Zelalem Abebe Lei, Kun Lan, Xiukai Liu, Xiangyu Wen, Hui Li, Weihao Deng, Yongcheng Zhu, Wenkai Cai, Kaiming Wang, Kaiyou |
| author_facet | Bekele, Zelalem Abebe Lei, Kun Lan, Xiukai Liu, Xiangyu Wen, Hui Li, Weihao Deng, Yongcheng Zhu, Wenkai Cai, Kaiming Wang, Kaiyou |
| contents | The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE) offers an alternative pathway to SHE for converting charge current into an angular momentum flow. In this study, we demonstrate field-free current-induced perpendicular ferrimagnetic deterministic switching within a Mo/CoGd device without an additional orbital-to-spin conversion layer. This is achieved by harnessing localized orbital Hall currents \left(\mathbit{J}_{\mathbit{OHE}}\right) generated in the Mo layer. The in-plane symmetry breaking at the Mo/CoGd surface-interface layer, validated by a pronounced planar Hall effect, gives rise to a substantial unconventional z-polarized damping-like torque. The CoGd serves a dual role: not only as a converter that transforms the significant \mathbit{J}_{\mathbit{OHE}} into \mathbit{J}_{\mathbit{SHE}} but also as a ferrimagnetic self-switching mechanism. This dual functionality enables highly efficient field-free current-induced magnetization switching with a critical current density as low as \mathbf{2}.\mathbf{51}\ \times{\mathbf{10}}^\mathbf{6} A cm-2. Our work highlights the potential of orbital Hall currents for energy-efficient magnetization switching, making a notable contribution to the burgeoning field of orbitronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_07608 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer Bekele, Zelalem Abebe Lei, Kun Lan, Xiukai Liu, Xiangyu Wen, Hui Li, Weihao Deng, Yongcheng Zhu, Wenkai Cai, Kaiming Wang, Kaiyou Materials Science The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE) offers an alternative pathway to SHE for converting charge current into an angular momentum flow. In this study, we demonstrate field-free current-induced perpendicular ferrimagnetic deterministic switching within a Mo/CoGd device without an additional orbital-to-spin conversion layer. This is achieved by harnessing localized orbital Hall currents \left(\mathbit{J}_{\mathbit{OHE}}\right) generated in the Mo layer. The in-plane symmetry breaking at the Mo/CoGd surface-interface layer, validated by a pronounced planar Hall effect, gives rise to a substantial unconventional z-polarized damping-like torque. The CoGd serves a dual role: not only as a converter that transforms the significant \mathbit{J}_{\mathbit{OHE}} into \mathbit{J}_{\mathbit{SHE}} but also as a ferrimagnetic self-switching mechanism. This dual functionality enables highly efficient field-free current-induced magnetization switching with a critical current density as low as \mathbf{2}.\mathbf{51}\ \times{\mathbf{10}}^\mathbf{6} A cm-2. Our work highlights the potential of orbital Hall currents for energy-efficient magnetization switching, making a notable contribution to the burgeoning field of orbitronics. |
| title | Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer |
| topic | Materials Science |
| url | https://arxiv.org/abs/2506.07608 |