Intense THz s-SNOM for nonlinearity engineering in nanoscale

Fuente: arXiv
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Auteurs principaux: Qi, Pengfei, zhang, Zeliang, Qian, Wenqi, Dai, Zijie, Li, Xingyou, Sun, Lu, Chin, See Leang, Agostini, Pierre, Liu, Weiwei
Format: Preprint
Publié: 2025
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author Qi, Pengfei
zhang, Zeliang
Qian, Wenqi
Dai, Zijie
Li, Xingyou
Sun, Lu
Chin, See Leang
Agostini, Pierre
Liu, Weiwei
author_facet Qi, Pengfei
zhang, Zeliang
Qian, Wenqi
Dai, Zijie
Li, Xingyou
Sun, Lu
Chin, See Leang
Agostini, Pierre
Liu, Weiwei
contents Terahertz (THz) nonlinear optics offer powerful tools to investigate and manipulate electronic dynamics in condensed matter. Confining high-peak-power THz pulses within near field can effectively generates extremely localized electromagnetic fields in spatio-temporal, enabling to precisely explore and control carrier transient dynamics from THz nonlinearity perspective. However, the combination of the high peak power THz pulses and the near-field optic techniques remains challenging due to the incompatibility between low repetition THz pulses and typical near-field demodulation schemes. Here, we construct high peak power THz scattering scanning near-field microscopy (THz s-SNOM) by combining THz pulses emitted from two-color femtosecond laser filaments with a tapping mode atomic force microscopy (AFM) and explore efficient THz third harmonics generation (THG) from the Cd3As2 film in nanoscale. The power-law dependence of the THz harmonics and theoretical calculation reveals a convincing third harmonic generation that is attributed to the nonequilibrium intraband dynamics driven by the strong THz pulses. Especially, the nanoscopic near-field THz third harmonic imaging with resolution of 200 nm (λ/3000) of 3D Dirac semimetal are demonstrated. The high peak power THz s-SNOM can provide a great platform for exploring and manipulating the nonlinear physics, carrier dynamics and quantum coherent phenomena driven by the localized THz field with nanoscale resolution, thereby guiding the development of the integrated high-performance nonlinear photonic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2506_07615
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Intense THz s-SNOM for nonlinearity engineering in nanoscale
Qi, Pengfei
zhang, Zeliang
Qian, Wenqi
Dai, Zijie
Li, Xingyou
Sun, Lu
Chin, See Leang
Agostini, Pierre
Liu, Weiwei
Optics
Terahertz (THz) nonlinear optics offer powerful tools to investigate and manipulate electronic dynamics in condensed matter. Confining high-peak-power THz pulses within near field can effectively generates extremely localized electromagnetic fields in spatio-temporal, enabling to precisely explore and control carrier transient dynamics from THz nonlinearity perspective. However, the combination of the high peak power THz pulses and the near-field optic techniques remains challenging due to the incompatibility between low repetition THz pulses and typical near-field demodulation schemes. Here, we construct high peak power THz scattering scanning near-field microscopy (THz s-SNOM) by combining THz pulses emitted from two-color femtosecond laser filaments with a tapping mode atomic force microscopy (AFM) and explore efficient THz third harmonics generation (THG) from the Cd3As2 film in nanoscale. The power-law dependence of the THz harmonics and theoretical calculation reveals a convincing third harmonic generation that is attributed to the nonequilibrium intraband dynamics driven by the strong THz pulses. Especially, the nanoscopic near-field THz third harmonic imaging with resolution of 200 nm (λ/3000) of 3D Dirac semimetal are demonstrated. The high peak power THz s-SNOM can provide a great platform for exploring and manipulating the nonlinear physics, carrier dynamics and quantum coherent phenomena driven by the localized THz field with nanoscale resolution, thereby guiding the development of the integrated high-performance nonlinear photonic devices.
title Intense THz s-SNOM for nonlinearity engineering in nanoscale
topic Optics
url https://arxiv.org/abs/2506.07615