Defect complexes in CrSBr revealed through electron microscopy and deep learning

Fuente: arXiv
Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Weile, Mads, Grytsiuk, Sergii, Penn, Aubrey, Chica, Daniel G., Roy, Xavier, Mosina, Kseniia, Sofer, Zdenek, Schiøtz, Jakob, Helveg, Stig, Rösner, Malte, Ross, Frances M., Klein, Julian
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866915335127433216
author Weile, Mads
Grytsiuk, Sergii
Penn, Aubrey
Chica, Daniel G.
Roy, Xavier
Mosina, Kseniia
Sofer, Zdenek
Schiøtz, Jakob
Helveg, Stig
Rösner, Malte
Ross, Frances M.
Klein, Julian
author_facet Weile, Mads
Grytsiuk, Sergii
Penn, Aubrey
Chica, Daniel G.
Roy, Xavier
Mosina, Kseniia
Sofer, Zdenek
Schiøtz, Jakob
Helveg, Stig
Rösner, Malte
Ross, Frances M.
Klein, Julian
contents Atomic defects underpin the properties of van der Waals materials, and their understanding is essential for advancing quantum and energy technologies. Scanning transmission electron microscopy is a powerful tool for defect identification in atomically thin materials, and extending it to multilayer and beam-sensitive materials would accelerate their exploration. Here we establish a comprehensive defect library in a bilayer of the magnetic quasi-1D semiconductor CrSBr by combining atomic-resolution imaging, deep learning, and ab-initio calculations. We apply a custom-developed machine learning work flow to detect, classify and average point vacancy defects. This classification enables us to uncover several distinct Cr interstitial defect complexes, combined Cr and Br vacancy defect complexes and lines of vacancy defects that extend over many unit cells. We show that their occurrence is in agreement with our computed structures and binding energy densities, reflecting the intriguing layer interlocked crystal structure of CrSBr. Our ab-initio calculations show that the interstitial defect complexes give rise to highly localized electronic states. These states are of particular interest due to the reduced electronic dimensionality and magnetic properties of CrSBr and are furthermore predicted to be optically active. Our results broaden the scope of defect studies in challenging materials and reveal new defect types in bilayer CrSBr that can be extrapolated to the bulk and to over 20 materials belonging to the same FeOCl structural family.
format Preprint
id arxiv_https___arxiv_org_abs_2506_08100
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Defect complexes in CrSBr revealed through electron microscopy and deep learning
Weile, Mads
Grytsiuk, Sergii
Penn, Aubrey
Chica, Daniel G.
Roy, Xavier
Mosina, Kseniia
Sofer, Zdenek
Schiøtz, Jakob
Helveg, Stig
Rösner, Malte
Ross, Frances M.
Klein, Julian
Materials Science
Mesoscale and Nanoscale Physics
Atomic defects underpin the properties of van der Waals materials, and their understanding is essential for advancing quantum and energy technologies. Scanning transmission electron microscopy is a powerful tool for defect identification in atomically thin materials, and extending it to multilayer and beam-sensitive materials would accelerate their exploration. Here we establish a comprehensive defect library in a bilayer of the magnetic quasi-1D semiconductor CrSBr by combining atomic-resolution imaging, deep learning, and ab-initio calculations. We apply a custom-developed machine learning work flow to detect, classify and average point vacancy defects. This classification enables us to uncover several distinct Cr interstitial defect complexes, combined Cr and Br vacancy defect complexes and lines of vacancy defects that extend over many unit cells. We show that their occurrence is in agreement with our computed structures and binding energy densities, reflecting the intriguing layer interlocked crystal structure of CrSBr. Our ab-initio calculations show that the interstitial defect complexes give rise to highly localized electronic states. These states are of particular interest due to the reduced electronic dimensionality and magnetic properties of CrSBr and are furthermore predicted to be optically active. Our results broaden the scope of defect studies in challenging materials and reveal new defect types in bilayer CrSBr that can be extrapolated to the bulk and to over 20 materials belonging to the same FeOCl structural family.
title Defect complexes in CrSBr revealed through electron microscopy and deep learning
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2506.08100