Heat Dissipation and Thermoelectric Performance of InSe-Based Monolayers: A Monte Carlo Simulation Study
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| Format: | Preprint |
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2025
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| author | Bahadori, Seyedeh Ameneh Shomali, Zahra Asgari, Reza |
| author_facet | Bahadori, Seyedeh Ameneh Shomali, Zahra Asgari, Reza |
| contents | Using nonequilibrium Monte Carlo simulations of the phonon Boltzmann transport equation, we study transient heat transfer in five indium-based two-dimensional monolayers: Janus monolayers In$_2$SeTe and In$_2$SSe, pristine InSe, and InSe under 4$\%$ and 6$\%$ tensile strain. In this work, the potential of these materials for energy conversion in thermoelectric generators and hotspot control in metal-oxide-semiconductor field-effect transistors is investigated. A promising option for an effective heat dissipation and enhanced transistor reliability is found to be a strained InSe, which shows the lowest peak temperature during the heating among the studied materials. On the other hand, with a high Seebeck coefficient, low thermal conductivity, and an improved figure of merit, the Janus In$_2$SeTe monolayer, compensates for its increased phonon scattering to reach the maximum temperature, making it a potent thermoelectric material. Our findings emphasis the importance of strain engineering and structural asymmetry in tuning phonon transport, enabling material optimization for next-generation nanoelectronic and energy-harvesting devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2506_08212 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Heat Dissipation and Thermoelectric Performance of InSe-Based Monolayers: A Monte Carlo Simulation Study Bahadori, Seyedeh Ameneh Shomali, Zahra Asgari, Reza Applied Physics Mesoscale and Nanoscale Physics Using nonequilibrium Monte Carlo simulations of the phonon Boltzmann transport equation, we study transient heat transfer in five indium-based two-dimensional monolayers: Janus monolayers In$_2$SeTe and In$_2$SSe, pristine InSe, and InSe under 4$\%$ and 6$\%$ tensile strain. In this work, the potential of these materials for energy conversion in thermoelectric generators and hotspot control in metal-oxide-semiconductor field-effect transistors is investigated. A promising option for an effective heat dissipation and enhanced transistor reliability is found to be a strained InSe, which shows the lowest peak temperature during the heating among the studied materials. On the other hand, with a high Seebeck coefficient, low thermal conductivity, and an improved figure of merit, the Janus In$_2$SeTe monolayer, compensates for its increased phonon scattering to reach the maximum temperature, making it a potent thermoelectric material. Our findings emphasis the importance of strain engineering and structural asymmetry in tuning phonon transport, enabling material optimization for next-generation nanoelectronic and energy-harvesting devices. |
| title | Heat Dissipation and Thermoelectric Performance of InSe-Based Monolayers: A Monte Carlo Simulation Study |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.08212 |