Bound States at Semiconductor -- Mott Insulator Interfaces
Fuente:
arXiv
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| Autori principali: | , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866915711939510272 |
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| author | Verlage, Jan Kratzer, Peter |
| author_facet | Verlage, Jan Kratzer, Peter |
| contents | Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor-Mott-semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_08264 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Bound States at Semiconductor -- Mott Insulator Interfaces Verlage, Jan Kratzer, Peter Strongly Correlated Electrons Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor-Mott-semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence. |
| title | Bound States at Semiconductor -- Mott Insulator Interfaces |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2506.08264 |