Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866908581645778944 |
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| author | Lopez-Richard, Victor Silva, Igor Ricardo Filgueira e Rodrigues, Gabriel L. de Oliveira, Rafael Furlan Watanabe, Kenji Taniguchi, Takashi Cadore, Alisson R. |
| author_facet | Lopez-Richard, Victor Silva, Igor Ricardo Filgueira e Rodrigues, Gabriel L. de Oliveira, Rafael Furlan Watanabe, Kenji Taniguchi, Takashi Cadore, Alisson R. |
| contents | Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and nonvolatile interpretations. Here, we present a unified dynamic model that captures the essential physics of the GFET response under periodic gate modulation, accounting for both intrinsic relaxation processes and externally driven charge transfer. By modeling non-equilibrium carrier dynamics as a competition between injection and reabsorption rates, we uncover two distinct regimes: one governed by intrinsic, frequency-independent relaxation and another exhibiting frequency-locked behavior where the response is tied to the external drive. This distinction resolves apparent nonvolatile effects and explains loop invariance in floating-gate structures via displacement current-driven charge injection. Our framework predicts the evolution of the hysteresis loop shape, amplitude, and direction across a wide range of driving conditions, offering a versatile tool for interpreting experimental results and guiding the design of next-generation graphene-based electronic systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_08728 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics Lopez-Richard, Victor Silva, Igor Ricardo Filgueira e Rodrigues, Gabriel L. de Oliveira, Rafael Furlan Watanabe, Kenji Taniguchi, Takashi Cadore, Alisson R. Mesoscale and Nanoscale Physics Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and nonvolatile interpretations. Here, we present a unified dynamic model that captures the essential physics of the GFET response under periodic gate modulation, accounting for both intrinsic relaxation processes and externally driven charge transfer. By modeling non-equilibrium carrier dynamics as a competition between injection and reabsorption rates, we uncover two distinct regimes: one governed by intrinsic, frequency-independent relaxation and another exhibiting frequency-locked behavior where the response is tied to the external drive. This distinction resolves apparent nonvolatile effects and explains loop invariance in floating-gate structures via displacement current-driven charge injection. Our framework predicts the evolution of the hysteresis loop shape, amplitude, and direction across a wide range of driving conditions, offering a versatile tool for interpreting experimental results and guiding the design of next-generation graphene-based electronic systems. |
| title | Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.08728 |