Evidence of Mott Insulator with Thermally Induced Melting Behavior in Kagome Compound Nb3Cl8

Fuente: arXiv
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Autores principales: Yang, Qiu, Wu, Min, Duan, Jingyi, Ma, Zhijie, Li, Lingxiao, Huo, Zihao, Zhang, Zaizhe, Watanabe, Kenji, Taniguchi, Takashi, Zhao, Xiaoxu, Chen, Yi, Shi, Youguo, Jiang, Wei, Liu, Kaihui, Lu, Xiaobo
Formato: Preprint
Publicado: 2025
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author Yang, Qiu
Wu, Min
Duan, Jingyi
Ma, Zhijie
Li, Lingxiao
Huo, Zihao
Zhang, Zaizhe
Watanabe, Kenji
Taniguchi, Takashi
Zhao, Xiaoxu
Chen, Yi
Shi, Youguo
Jiang, Wei
Liu, Kaihui
Lu, Xiaobo
author_facet Yang, Qiu
Wu, Min
Duan, Jingyi
Ma, Zhijie
Li, Lingxiao
Huo, Zihao
Zhang, Zaizhe
Watanabe, Kenji
Taniguchi, Takashi
Zhao, Xiaoxu
Chen, Yi
Shi, Youguo
Jiang, Wei
Liu, Kaihui
Lu, Xiaobo
contents The kagome lattice provides a playground to explore novel correlated quantum states due to the presence of flat bands in its electronic structure. Recently discovered layered kagome compound Nb3Cl8 has been proposed as a Mott insulator coming from the half-filled flat band. Here we have carried out systematic transport study to uncover the evidence of Mott insulator in Nb3Cl8 thin flakes. Bipolar semiconducting property with Fermi level close to conduction band has been revealed. We have further probed the chemical potential of Nb3Cl8 by tracing the charge neutrality point of the monolayer graphene proximate to Nb3Cl8. The gap of Nb3Cl8 flakes is approximately 1.10 eV at 100 K and shows pronounced temperature dependence, decreasing substantially with increasing temperature to ~0.63 eV at 300 K. The melting behavior of the gapped state is in consistent with theoretically proposed Mott insulator in Nb3Cl8. Our work has demonstrated Nb3Cl8 as a promising platform to study strongly correlated physics at relatively high temperature.
format Preprint
id arxiv_https___arxiv_org_abs_2506_08730
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Evidence of Mott Insulator with Thermally Induced Melting Behavior in Kagome Compound Nb3Cl8
Yang, Qiu
Wu, Min
Duan, Jingyi
Ma, Zhijie
Li, Lingxiao
Huo, Zihao
Zhang, Zaizhe
Watanabe, Kenji
Taniguchi, Takashi
Zhao, Xiaoxu
Chen, Yi
Shi, Youguo
Jiang, Wei
Liu, Kaihui
Lu, Xiaobo
Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
The kagome lattice provides a playground to explore novel correlated quantum states due to the presence of flat bands in its electronic structure. Recently discovered layered kagome compound Nb3Cl8 has been proposed as a Mott insulator coming from the half-filled flat band. Here we have carried out systematic transport study to uncover the evidence of Mott insulator in Nb3Cl8 thin flakes. Bipolar semiconducting property with Fermi level close to conduction band has been revealed. We have further probed the chemical potential of Nb3Cl8 by tracing the charge neutrality point of the monolayer graphene proximate to Nb3Cl8. The gap of Nb3Cl8 flakes is approximately 1.10 eV at 100 K and shows pronounced temperature dependence, decreasing substantially with increasing temperature to ~0.63 eV at 300 K. The melting behavior of the gapped state is in consistent with theoretically proposed Mott insulator in Nb3Cl8. Our work has demonstrated Nb3Cl8 as a promising platform to study strongly correlated physics at relatively high temperature.
title Evidence of Mott Insulator with Thermally Induced Melting Behavior in Kagome Compound Nb3Cl8
topic Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2506.08730