Salvato in:
| Autori principali: | , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2025
|
| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2506.09835 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866912425088909312 |
|---|---|
| author | Brodeur, Julien Rahier, Éloïse Chartray-Pronovost, Mathieu Robert, Étienne Moutanabbir, Oussama Kéna-Cohen, Stéphane |
| author_facet | Brodeur, Julien Rahier, Éloïse Chartray-Pronovost, Mathieu Robert, Étienne Moutanabbir, Oussama Kéna-Cohen, Stéphane |
| contents | We demonstrate a high-performance mid-infrared (MIR) light-emitting diode (LED) based on a black phosphorus (b-P)/n-MoS$_2$ heterojunction. A gold back contact combined with a rhenium-doped n-type MoS$_2$ layer is used to enhance light extraction. The device shows a MIR peak external quantum efficiency (EQE) of (1.6 $\pm$ 0.2) % at room temperature and a record (7.0 $\pm$ 0.5) % EQE at 77 K, with a maximum radiant power density of (108 $\pm$ 8) W/cm2. Finite-element simulations highlight the importance of phonon-assisted band-to-band tunneling under reverse bias and the influence of carrier velocity saturation under forward bias. The simulations also reveal that the high ideality factors extracted from the current-voltage characteristic are due to current crowding at the heterojunction and a consequence of the device geometry. These findings establish a new high-performance b-P LED architecture and provide crucial insights into the physics of MIR sources based on 2D materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_09835 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact Brodeur, Julien Rahier, Éloïse Chartray-Pronovost, Mathieu Robert, Étienne Moutanabbir, Oussama Kéna-Cohen, Stéphane Applied Physics Optics We demonstrate a high-performance mid-infrared (MIR) light-emitting diode (LED) based on a black phosphorus (b-P)/n-MoS$_2$ heterojunction. A gold back contact combined with a rhenium-doped n-type MoS$_2$ layer is used to enhance light extraction. The device shows a MIR peak external quantum efficiency (EQE) of (1.6 $\pm$ 0.2) % at room temperature and a record (7.0 $\pm$ 0.5) % EQE at 77 K, with a maximum radiant power density of (108 $\pm$ 8) W/cm2. Finite-element simulations highlight the importance of phonon-assisted band-to-band tunneling under reverse bias and the influence of carrier velocity saturation under forward bias. The simulations also reveal that the high ideality factors extracted from the current-voltage characteristic are due to current crowding at the heterojunction and a consequence of the device geometry. These findings establish a new high-performance b-P LED architecture and provide crucial insights into the physics of MIR sources based on 2D materials. |
| title | Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact |
| topic | Applied Physics Optics |
| url | https://arxiv.org/abs/2506.09835 |