On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films

Fuente: arXiv

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Bibliographic Details
Main Authors:	Kruszewski, Piotr, Coutinho, Jose, Markevich, Vladimir P., Prystawko, Pawel, Sun, Lijie, Plesiewicz, Jerzy, Dawe, Chris A., Halsall, Matthew P., Peaker, Anthony R.
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2506.10566