A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET
Fuente:
arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866911002069565440 |
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| author | Ribero-Figueroa, Xiomara Pacheco-Sanchez, Anibal Huang, Tzu-Jung Jiménez, David Puchades, Ivan Torres-Torres, Reydezel |
| author_facet | Ribero-Figueroa, Xiomara Pacheco-Sanchez, Anibal Huang, Tzu-Jung Jiménez, David Puchades, Ivan Torres-Torres, Reydezel |
| contents | The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device's static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_10592 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET Ribero-Figueroa, Xiomara Pacheco-Sanchez, Anibal Huang, Tzu-Jung Jiménez, David Puchades, Ivan Torres-Torres, Reydezel Mesoscale and Nanoscale Physics Applied Physics The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device's static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage. |
| title | A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2506.10592 |