Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies
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arXiv
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| Format: | Preprint |
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2025
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| author | Quiñonez, Walter Goossens, Anouk Rubi, Diego Banerjee, Tamalika Sánchez, María José |
| author_facet | Quiñonez, Walter Goossens, Anouk Rubi, Diego Banerjee, Tamalika Sánchez, María José |
| contents | Neuromorphic computing aims to develop energy-efficient devices that mimic biological synapses. One promising approach involves memristive devices that can dynamically adjust their electrical resistance in response to stimuli, similar to synaptic weight changes in the brain. However, a key challenge is understanding and controlling the coexistence of different types of synaptic plasticity, such as short-term and long-term plasticity. In this work, we show that plasticity behaviors in Co/Nb:STO Schottky memristors originate from oxygen vacancy electromigration, which modulates the Schottky barrier and enables both short-term and long-term plasticity. Our experiments reveal that resistance changes follow a power-law during reading (short-term plasticity) and increase stepwise with successive pulses (long-term memory retention). These behaviors are successfully reproduced by our model, which demonstrates the correlation between oxygen vacancy distribution and Schottky barrier modulation. Our findings highlight these memristors as promising candidates for neuromorphic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_11965 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies Quiñonez, Walter Goossens, Anouk Rubi, Diego Banerjee, Tamalika Sánchez, María José Mesoscale and Nanoscale Physics Neuromorphic computing aims to develop energy-efficient devices that mimic biological synapses. One promising approach involves memristive devices that can dynamically adjust their electrical resistance in response to stimuli, similar to synaptic weight changes in the brain. However, a key challenge is understanding and controlling the coexistence of different types of synaptic plasticity, such as short-term and long-term plasticity. In this work, we show that plasticity behaviors in Co/Nb:STO Schottky memristors originate from oxygen vacancy electromigration, which modulates the Schottky barrier and enables both short-term and long-term plasticity. Our experiments reveal that resistance changes follow a power-law during reading (short-term plasticity) and increase stepwise with successive pulses (long-term memory retention). These behaviors are successfully reproduced by our model, which demonstrates the correlation between oxygen vacancy distribution and Schottky barrier modulation. Our findings highlight these memristors as promising candidates for neuromorphic applications. |
| title | Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.11965 |