Guardado en:
| Autores principales: | , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2506.13448 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866911100060041216 |
|---|---|
| author | Zhu, Yuanhao Yuan, Xixi Zhao, Ying Zhang, Jin Ding, Zijing Fu, Huixia |
| author_facet | Zhu, Yuanhao Yuan, Xixi Zhao, Ying Zhang, Jin Ding, Zijing Fu, Huixia |
| contents | Bulk MnBi$_2$Te$_4$ (MBT) is an intrinsic antiferromagnetic topological insulator. However, its low Néel temperature of $\sim 25\,\mathrm{K}$ severely restricts its practical applications. Here, we propose a van der Waals heterostructure composed of monolayer MBT (ML-MBT) and monolayer MnBr$_3$, an intrinsic Chern insulator possessing a high Curie temperature ($T_\mathrm{C} \sim 200\,\mathrm{K}$). By employing density functional theory calculations and Monte Carlo simulations, we demonstrate that interfacing ML-MBT with MnBr$_3$ significantly enhances the $T_\mathrm{C}$ of ML-MBT by a factor of four to five. Electronic correlations characterized by the Hubbard parameter $U_2$ for Mn-$d$ orbitals in MnBr$_3$ play a crucial role in governing magnetic coupling within the system. At a moderate correlation strength of $U_2 = 3.0\,\mathrm{eV}$, slight structural distortions in MnBr$_3$ break intralayer symmetry, enabling robust interlayer ferromagnetic coupling and yielding a single, unified magnetic transition. Increasing $U_2$ reduces these structural distortions, weakens interlayer coupling, and induces two distinct magnetic transitions, indicating interlayer magnetic decoupling. Thus, the MBT/MnBr$_3$ heterostructure offers a novel approach for controlling magnetic order and enhancing the performance of spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_13448 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electronic Correlations Control Interlayer Coupling and Magnetic Transition in MnBi$_2$Te$_4$/MnBr$_3$ Heterostructure Zhu, Yuanhao Yuan, Xixi Zhao, Ying Zhang, Jin Ding, Zijing Fu, Huixia Materials Science Computational Physics Bulk MnBi$_2$Te$_4$ (MBT) is an intrinsic antiferromagnetic topological insulator. However, its low Néel temperature of $\sim 25\,\mathrm{K}$ severely restricts its practical applications. Here, we propose a van der Waals heterostructure composed of monolayer MBT (ML-MBT) and monolayer MnBr$_3$, an intrinsic Chern insulator possessing a high Curie temperature ($T_\mathrm{C} \sim 200\,\mathrm{K}$). By employing density functional theory calculations and Monte Carlo simulations, we demonstrate that interfacing ML-MBT with MnBr$_3$ significantly enhances the $T_\mathrm{C}$ of ML-MBT by a factor of four to five. Electronic correlations characterized by the Hubbard parameter $U_2$ for Mn-$d$ orbitals in MnBr$_3$ play a crucial role in governing magnetic coupling within the system. At a moderate correlation strength of $U_2 = 3.0\,\mathrm{eV}$, slight structural distortions in MnBr$_3$ break intralayer symmetry, enabling robust interlayer ferromagnetic coupling and yielding a single, unified magnetic transition. Increasing $U_2$ reduces these structural distortions, weakens interlayer coupling, and induces two distinct magnetic transitions, indicating interlayer magnetic decoupling. Thus, the MBT/MnBr$_3$ heterostructure offers a novel approach for controlling magnetic order and enhancing the performance of spintronic devices. |
| title | Electronic Correlations Control Interlayer Coupling and Magnetic Transition in MnBi$_2$Te$_4$/MnBr$_3$ Heterostructure |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2506.13448 |