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Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin Film Transistors

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Yoon, Chankeun, Ahn, Juhan, Zhou, Yuchen, Kulkarni, Jaydeep P., Dodabalapur, Ananth
Format:	Preprint
Publié:	2025
Sujets:	Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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