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| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2506.14358 |
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| _version_ | 1866911009340391424 |
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| author | Xie, Lin-Ke Liu, Wei Huang, Kaiyu Guo, Nai-Jie Liu, Jun-You Ma, Yu-Hang Wu, Ya-Qi Wang, Yi-Tao Wang, Zhao-an Zeng, Xiao-Dong Ren, Jia-Ming Ao, Chun Deng, Shuo Lu, Haifei Tang, Jian-Shun Li, Chuan-Feng Guo, Guang-Can |
| author_facet | Xie, Lin-Ke Liu, Wei Huang, Kaiyu Guo, Nai-Jie Liu, Jun-You Ma, Yu-Hang Wu, Ya-Qi Wang, Yi-Tao Wang, Zhao-an Zeng, Xiao-Dong Ren, Jia-Ming Ao, Chun Deng, Shuo Lu, Haifei Tang, Jian-Shun Li, Chuan-Feng Guo, Guang-Can |
| contents | The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited spin-phonon interactions, while the underlying physical mechanism of the corresponding high-temperature behavior is still not fully understood. Here, we probe the single- and double-quantum relaxation rates on this center over the temperature range from 293 to 393 K. The results show that both relaxation rates increase with increasing temperature, and the double-quantum relaxation rate significantly increases rapidly. At high temperature (above 400 K), the double-quantum relaxation rate is much greater than single-quantum relaxation rate, and may dominate the decoherence channel of spin-phonon interactions. Using a theoretical model of second-order spin-phonon interactions, we attribute the high-temperature spin relaxation rates to interactions with higher-energy effective phonon mode, aiding the further understanding and guiding high-temperature sensing applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_14358 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Temperature dependent single- and double-quantum relaxation of negatively charged boron vacancies in hexagonal boron nitride Xie, Lin-Ke Liu, Wei Huang, Kaiyu Guo, Nai-Jie Liu, Jun-You Ma, Yu-Hang Wu, Ya-Qi Wang, Yi-Tao Wang, Zhao-an Zeng, Xiao-Dong Ren, Jia-Ming Ao, Chun Deng, Shuo Lu, Haifei Tang, Jian-Shun Li, Chuan-Feng Guo, Guang-Can Quantum Physics The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited spin-phonon interactions, while the underlying physical mechanism of the corresponding high-temperature behavior is still not fully understood. Here, we probe the single- and double-quantum relaxation rates on this center over the temperature range from 293 to 393 K. The results show that both relaxation rates increase with increasing temperature, and the double-quantum relaxation rate significantly increases rapidly. At high temperature (above 400 K), the double-quantum relaxation rate is much greater than single-quantum relaxation rate, and may dominate the decoherence channel of spin-phonon interactions. Using a theoretical model of second-order spin-phonon interactions, we attribute the high-temperature spin relaxation rates to interactions with higher-energy effective phonon mode, aiding the further understanding and guiding high-temperature sensing applications. |
| title | Temperature dependent single- and double-quantum relaxation of negatively charged boron vacancies in hexagonal boron nitride |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2506.14358 |