High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866915348515651584 |
|---|---|
| author | Mistroni, Alberto Lisker, Marco Yamamoto, Yuji Wen, Wei-Chen Fidorra, Fabian Tetzner, Henriette Diebel, Laura K. Visser, Lino Anupam, Spandan Mourik, Vincent Schreiber, Lars R. Bluhm, Hendrik Bougeard, Dominique Zoellner, Marvin H. Capellini, Giovanni Reichmann, Felix |
| author_facet | Mistroni, Alberto Lisker, Marco Yamamoto, Yuji Wen, Wei-Chen Fidorra, Fabian Tetzner, Henriette Diebel, Laura K. Visser, Lino Anupam, Spandan Mourik, Vincent Schreiber, Lars R. Bluhm, Hendrik Bougeard, Dominique Zoellner, Marvin H. Capellini, Giovanni Reichmann, Felix |
| contents | The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent performance across multiple fabrication runs. Here, we report a comprehensive investigation of Si/SiGe heterostructures and gate stacks, fabricated in an industry-standard 200 mm BiCMOS pilot line. We evaluate the homogeneity and reproducibility by probing the properties of the two-dimensional electron gas (2DEG) in the shallow silicon quantum well through magnetotransport characterization of Hall bar-shaped field-effect transistors at 1.5 K. Across all the probed wafers, we observe minimal variation of the 2DEG properties, with an average maximum mobility of $(4.25\pm0.17)\times 10^{5}$ cm$^{2}$/Vs and low percolation carrier density of $(5.9\pm0.18)\times 10^{10}$ cm$^{-2}$ evidencing low disorder potential in the quantum well. The observed narrow statistical distribution of the transport properties highlights the reproducibility and the stability of the fabrication process. Furthermore, wafer-scale characterization of a selected individual wafer evidenced the homogeneity of the device performances across the wafer area. Based on these findings, we conclude that our material and processes provide a suitable platform for the development of scalable, Si/SiGe-based quantum devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_14660 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line Mistroni, Alberto Lisker, Marco Yamamoto, Yuji Wen, Wei-Chen Fidorra, Fabian Tetzner, Henriette Diebel, Laura K. Visser, Lino Anupam, Spandan Mourik, Vincent Schreiber, Lars R. Bluhm, Hendrik Bougeard, Dominique Zoellner, Marvin H. Capellini, Giovanni Reichmann, Felix Mesoscale and Nanoscale Physics Applied Physics The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent performance across multiple fabrication runs. Here, we report a comprehensive investigation of Si/SiGe heterostructures and gate stacks, fabricated in an industry-standard 200 mm BiCMOS pilot line. We evaluate the homogeneity and reproducibility by probing the properties of the two-dimensional electron gas (2DEG) in the shallow silicon quantum well through magnetotransport characterization of Hall bar-shaped field-effect transistors at 1.5 K. Across all the probed wafers, we observe minimal variation of the 2DEG properties, with an average maximum mobility of $(4.25\pm0.17)\times 10^{5}$ cm$^{2}$/Vs and low percolation carrier density of $(5.9\pm0.18)\times 10^{10}$ cm$^{-2}$ evidencing low disorder potential in the quantum well. The observed narrow statistical distribution of the transport properties highlights the reproducibility and the stability of the fabrication process. Furthermore, wafer-scale characterization of a selected individual wafer evidenced the homogeneity of the device performances across the wafer area. Based on these findings, we conclude that our material and processes provide a suitable platform for the development of scalable, Si/SiGe-based quantum devices. |
| title | High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2506.14660 |