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High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Mistroni, Alberto, Lisker, Marco, Yamamoto, Yuji, Wen, Wei-Chen, Fidorra, Fabian, Tetzner, Henriette, Diebel, Laura K., Visser, Lino, Anupam, Spandan, Mourik, Vincent, Schreiber, Lars R., Bluhm, Hendrik, Bougeard, Dominique, Zoellner, Marvin H., Capellini, Giovanni, Reichmann, Felix
Format:	Preprint
Publié:	2025
Sujets:	Mesoscale and Nanoscale Physics Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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