High-efficiency WSe$_2$ photovoltaics enabled by ultra-clean van der Waals contacts
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866908410871545856 |
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| author | Paul, Kamal Kumar Chosy, Cullen Sarkar, Soumya Li, Zhuangnan Yan, Han Wang, Ye Loh, Leyi Liu, Lixin Jeong, Hu Young Stranks, Samuel D. Wang, Yan Chhowalla, Manish |
| author_facet | Paul, Kamal Kumar Chosy, Cullen Sarkar, Soumya Li, Zhuangnan Yan, Han Wang, Ye Loh, Leyi Liu, Lixin Jeong, Hu Young Stranks, Samuel D. Wang, Yan Chhowalla, Manish |
| contents | Layered transition metal dichalcogenide semiconductors are interesting for photovoltaics owing to their high solar absorbance and efficient carrier diffusion. Tungsten diselenide (WSe$_2$), in particular, has emerged as a promising solar cell absorber. However, defective metal-semiconductor interfaces have restricted the power conversion efficiency (PCE) to approximately 6%. Here we report WSe$_2$ photovoltaics with a record-high PCE of approximately 11% enabled by ultra-clean indium/gold (In/Au) van der Waals (vdW) contacts. Using grid-patterned top vdW electrodes, we demonstrate near-ideal diodes with a record-high on/off ratio of $1.0\times 10^9$. Open-circuit voltage (VOC) of 571 +/- 9 mV, record-high short-circuit current density (JSC) of 27.19 +/- 0.45 mA cm$^{-2}$ -- approaching the theoretical limit (34.5 mA cm$^{-2}$) -- and fill factor of 69.2 +/- 0.7% resulting in PCE of 10.8 +/- 0.2% under 1-Sun illumination on large active area (approximately 0.13x0.13 mm$^2$) devices have been realised. The excellent device performance is consistent with the high external quantum efficiency (up to approximately 93%) measured across a broad spectral range of 500-830 nm. Our results suggest that ultra-clean vdW contacts on WSe$_2$ enable high-efficiency photovoltaics and form the foundation for further optimisation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_14733 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-efficiency WSe$_2$ photovoltaics enabled by ultra-clean van der Waals contacts Paul, Kamal Kumar Chosy, Cullen Sarkar, Soumya Li, Zhuangnan Yan, Han Wang, Ye Loh, Leyi Liu, Lixin Jeong, Hu Young Stranks, Samuel D. Wang, Yan Chhowalla, Manish Materials Science Applied Physics Layered transition metal dichalcogenide semiconductors are interesting for photovoltaics owing to their high solar absorbance and efficient carrier diffusion. Tungsten diselenide (WSe$_2$), in particular, has emerged as a promising solar cell absorber. However, defective metal-semiconductor interfaces have restricted the power conversion efficiency (PCE) to approximately 6%. Here we report WSe$_2$ photovoltaics with a record-high PCE of approximately 11% enabled by ultra-clean indium/gold (In/Au) van der Waals (vdW) contacts. Using grid-patterned top vdW electrodes, we demonstrate near-ideal diodes with a record-high on/off ratio of $1.0\times 10^9$. Open-circuit voltage (VOC) of 571 +/- 9 mV, record-high short-circuit current density (JSC) of 27.19 +/- 0.45 mA cm$^{-2}$ -- approaching the theoretical limit (34.5 mA cm$^{-2}$) -- and fill factor of 69.2 +/- 0.7% resulting in PCE of 10.8 +/- 0.2% under 1-Sun illumination on large active area (approximately 0.13x0.13 mm$^2$) devices have been realised. The excellent device performance is consistent with the high external quantum efficiency (up to approximately 93%) measured across a broad spectral range of 500-830 nm. Our results suggest that ultra-clean vdW contacts on WSe$_2$ enable high-efficiency photovoltaics and form the foundation for further optimisation. |
| title | High-efficiency WSe$_2$ photovoltaics enabled by ultra-clean van der Waals contacts |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2506.14733 |